Temperature Effects

PN

________ junction diode parameters like reverse saturation current, bias current, reverse breakdown voltage and barrier voltage are dependent on temperature.

electron hole

Rise in temperature generates more ________ pairs thus conductivity increases and thus there is an increase in current.

reverse saturation

Increase in ________ current with temperature offsets the effect of rise in temperature.

Reverse

________ (leakage) Current: As an ideal diode does not contain a breakdown end, it never performs and ________ current termed leakage current.

Ideal Diode

________: When a(n) ________ is in forward bias, it offers no resistance and acts as an open switch.

Reverse breakdown voltage

________ (VR) also increases as we increase the temperature.

ideal insulator

It is a(n) ________ when voltage is applied in reverse.

Total Power Dissipation

________: It is the maximum possible power dissipation of the diode when it is forward biased.

Carrier voltage

________ is also dependent on temperature as it decreases 2.5mV per degree Celsius for germanium and silicon.

Ideal Diode

When an ideal diode is in forward bias, it offers no resistance and acts as an open switch

Practical Diode

A diode which is said to be forward biased it starts conducting at knee voltage and under reverse bias no current due to majority charges hence a practical diode is considered to be an open switch(minority charge current ignored)

Threshold Voltage

Ideal diodes do not have a threshold voltage

Forward Current

Ideal diodes include unlimited forward current when any forward voltage is applied across the terminals

Breakdown voltage

Ideal diodes do not have breakdown voltage

Reverse (leakage) Current

As an ideal diode does not contain a breakdown end, it never performs and reverse current termed leakage current

Peak Inverse Voltage

Also known as Maximum Reverse Voltage, it is the max allowable reverse operating voltage that can be applied across the diode without reverse breakdown and damaging occurring to the device

Total Power Dissipation

It is the maximum possible power dissipation of the diode when it is forward biased

Ideal diode under reverse bias

offers infinite resistance and hence acts like an open switch