How does a 3-phase inverter in a VFD generate variable-frequency AC output?
AC is rectified to DC and filtered into a DC bus. Three inverter legs (MOSFETs/IGBTs) switch using PWM (sine-PWM or SVPWM). Modulating the PWM duty cycle creates a sinusoidal waveform with controllable frequency and amplitude, and each leg is phase-shifted 120° to produce balanced 3-phase output.
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What is gate charge (Qg) and why is it important?
Total charge needed to turn a MOSFET from OFF to ON. Determines switching speed, driver requirements, and switching losses. High Qg slows switching if the driver cannot source enough current, increasing losses and limiting frequency.
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What causes voltage overshoot and ringing in a switching waveform?
LC resonance from parasitic inductance and capacitance in power and gate loops. High dV/dt and dI/dt excite oscillations. Mitigation: gate resistors, minimize loop inductance, snubbers, proper decoupling, and careful PCB layout.
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What happens if switching frequency is increased too much?
Higher switching losses → heat in semiconductors, increased RMS current in DC bus capacitors → more ripple and shorter lifespan, higher EMI, driver stress. Must balance frequency with efficiency, reliability, and thermal limits.
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Compare MOSFETs vs IGBTs for VFD applications.
MOSFETs: low voltage, high frequency, fast switching, low switching loss, conduction loss rises with current². IGBTs: high voltage/current, slower switching, lower conduction loss at high current, smoother waveform, limited high-frequency use.
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Possible causes of IGBT overheating at currents below rating?
Excessive switching loss due to slow gate drive, parasitic ringing, shoot-through from dead-time errors, or inadequate heatsinking.
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Why use PWM in a VFD instead of just switching at output frequency?
High-frequency PWM modulates the average voltage to approximate a sine wave. Reduces current/torque ripple, allows amplitude control (V/f), reduces harmonics, and enables efficient control without resistive losses.
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Datasheet parameters: Rds(on), Qg, Coss, Vds,max — what do they mean?
Rds(on): On-resistance, affects conduction loss. Qg: Gate charge, affects switching speed and driver requirements. Coss: Output capacitance, affects switching loss and dV/dt stress. Vds,max: Maximum drain-source voltage, limits safe operating voltage.
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What is a dead-time in an inverter and why is it important?
Time inserted between turning off one switch and turning on the complementary switch in a half-bridge to prevent shoot-through. Incorrect dead-time can cause conduction loss, ringing, or device failure.
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Explain field-oriented control (FOC) at a high level.
Transforms 3-phase currents to dq frame (rotating reference), controlling torque and flux independently via decoupled current loops. Enables precise speed/torque control in motors.
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What is CMTI (Common Mode Transient Immunity)?
A parameter for gate drivers indicating the maximum dV/dt the driver can tolerate between power and gate reference without mis-triggering. Important in high-speed inverter switching.
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How do parasitic inductance and capacitance affect a VFD inverter?
They form LC resonances causing ringing and overshoot, increasing device stress, EMI, and losses. Minimized via layout optimization and careful component placement.
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What is the tradeoff between switching speed and efficiency?
Faster switching → lower current ripple but higher switching losses and EMI. Slower switching → lower losses and EMI but more ripple. Must balance for thermal, EMI, and motor performance.
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How does increasing switching frequency affect DC bus capacitors?
Increases RMS current → more heating → shorter lifespan, higher ripple voltage, and stress on capacitor dielectric.
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Name key methods to reduce switching losses in MOSFETs or IGBTs.
Optimize gate drive voltage/current, minimize parasitic inductance, choose device with low Qg/Coss appropriate for frequency, optimize dead-time to prevent shoot-through.
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Why do IGBTs produce smoother waveforms than MOSFETs?
How is switching loss calculated in a MOSFET or IGBT?
Approximate by integrating the instantaneous voltage × current during turn-on/off: P_sw = f_sw × (E_on + E_off), where E_on and E_off are the energy losses per switching event.
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Name typical protection features in a VFD inverter.
Overcurrent/shoot-through protection, overvoltage / DC bus clamp, thermal protection, short-circuit / under-voltage detection.
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What is the effect of parasitic inductance in the gate loop?
Increases ringing, slows switching if combined with gate resistor, can cause mis-triggering and extra switching loss.
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Why is Rds(on) important in high-current MOSFETs?
Determines conduction loss: P_cond = I² × Rds(on). Lower Rds(on) reduces heat, especially at high currents.
Voltage range during MOSFET switching where gate voltage remains nearly constant while drain current rises. Determines switching time and losses.
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Why is dead-time necessary in a half-bridge?
Prevents shoot-through by ensuring both high- and low-side switches are never on simultaneously.
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How does switching frequency affect EMI?
Higher frequency → more high-frequency harmonics → increased EMI. Requires filtering or layout considerations.
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What are common methods to reduce EMI in VFDs?
Snubbers, proper layout, twisted pair motor leads, common-mode chokes, shielding.
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What is back-EMF in a motor and why does it matter in VFD design?
Voltage generated by motor motion opposing applied voltage. Affects current control, switching losses, and protection design.
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What is the difference between hard-switching and soft-switching?
Hard-switching: device switches while voltage and current overlap → higher losses. Soft-switching: switching occurs at zero voltage or zero current → reduces losses.
How do you calculate RMS current in a DC bus capacitor?
I_RMS = sqrt(1/T ∫₀^T i_C^2 dt), where i_C is instantaneous capacitor current. For PWM, approximate using ripple formula: I_RMS ≈ I_L × sqrt(D(1-D)), where D is duty cycle.
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How do you calculate energy stored in a capacitor?
E = 0.5 × C × V^2
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How do you calculate DC bus ripple voltage?
ΔV = I_Ripple / (f_sw × C), approximation for high-frequency ripple, where I_Ripple is capacitor ripple current.
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How do you calculate peak current through a half-bridge MOSFET?
I_peak = I_load + (ΔI / 2), where ΔI is inductor or motor ripple current.
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How do you calculate switching loss due to Coss?
E_sw(Coss) = 0.5 × Coss × Vds^2 per switching event.
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What is the formula for total inverter output voltage in SVPWM?
V_out = V_dc × M × sin(θ), where M is modulation index and θ is electrical angle.
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What is the RMS voltage output of a sine PWM inverter?
V_RMS = V_dc / sqrt(2) × M, for linear modulation range (0 < M < 1)
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How do you calculate modulation index in SVPWM?
M = V_phase / (V_dc / sqrt(3)), ratio of desired phase voltage to maximum achievable phase voltage.
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How do you calculate the dead-time effect on output voltage?
ΔV = I_load × Rds(on) × (t_dead / T_switch), voltage lost due to non-conduction during dead-time.
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How do you estimate thermal junction temperature?
T_j = T_ambient + P_total × R_thJA, where R_thJA is junction-to-ambient thermal resistance.
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How do you calculate diode reverse recovery loss?
P_rr = f_sw × V_R × Q_rr, where Q_rr is reverse recovery charge and V_R is reverse voltage during recovery.
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How do you calculate switching loss in a half-bridge with inductive load?
Integrate instantaneous v_DS × i_D over transition time, P_sw = f_sw × ∫ v_DS × i_D dt.
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How do you calculate RMS current in a 3-phase load?
I_RMS = sqrt((I_a^2 + I_b^2 + I_c^2)/3)
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How do you calculate the fundamental component of PWM voltage?
V_1 = 4 × V_dc / (π × sqrt(2)) × sin(π × D), where D is duty ratio per PWM period.
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How do you estimate IGBT tail energy?
E_tail ≈ ∫ V_CE × I_tail dt during turn-off. Typically extracted from datasheet graphs.
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How do you calculate switching loss reduction by slower dV/dt?
Slower transitions reduce peak I × V overlap, reducing E_on + E_off, but may increase total losses if excessively slow due to conduction overlap.
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How do you calculate peak voltage stress due to ringing?