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Industrial Electrons
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VCBO refers to…
collector to base breakdown voltage.
VCEO refers to…
collector to emitter breakdown voltage.
fT refers to…
gain-bandwidth product.
The frequency at which the gain of a transistor drops to unity is called it’s…
gain-bandwidth product or fT.
If a data sheet refers to MAX PD it is reffering to…
maximum power dissipation.
The formula to calculate the dynamic resistance of the base-emitter junction is…
r’e = 25mV / IE
A transistor switch should be in one of what two conditions…
saturation and cut-off.
A NPN transistor always behaves exactly like two diodes joined node to node. (T/F)
False.
Normally, the collector-base junction of a transistor is reversed-biased. (T/F)
True.
To get collector current, the base-collector junction must be forward-biased. (T/F)
False.
The emitter injects minority carriers into the base. (T/F)
True.
The injection of minority carriers into the base is controlled by the base-emitter voltage. (T/F)
True.
Base current is due to a small percentage of minority carriers combining with majority carriers. (T/F)
True.
Transistors having the same part number will have approximately the same value for current gain. (T/F)
False.
At saturation, collector current is limited by the base current. (T/F)
False.
Collector-emitter current is effectively zero at cut-off. (T/F)
True.
When measured with an Ohm-meter, the collector-base drop us typically less that the emitter-base drop. (T/F)
True.
The current gain of a transistor will decrease above some signal frequency. (T/F)
True.
The input resistance of a transistor is constant. (T/F)
False.
The dynamic resistance of a PN junction depends on the current going through it. (T/F)
True.
When a transistor is fully on, and its current is limited by the load resistance, it is:
in saturation.
The B of a transistor is defined as:
collector current divided by base current.
A transistor can be used as:
a switch and an amplifier.
Another term for B is:
hFE.
When the transistor is a one-transistor amplifier conducts during all parts of the signal, it is:
class A.
When the transistor in a one-transistor amplifier conducts during half of the singal, it is:
class B.
The Q-point of a transistor refers to its:
bias point.
Gain means that, for the signal being amplified:
output power is greater than input power.
Given a transistor with a fixed amount of base current, when VCE increases, IC will:
stay the same.
A transistor amplifier is inverting when:
the output signal goes up when the input signal goes down.
When a transistor is in cut-off:
collector current is zero.
What can you say about a transistor if IC = 100mA when VBE = 0V:
it has failed shorted.
What can you say about a transistor if IC = 0mA when VBE = 0.7V:
it has failed open.
If VBE is measured to be 2.7V on an NPN transistor:
the base-emitter junction is open.
Q-point instability is caused by
beta.
As a transistor warms up, the value of its beta
increases.
In voltage divider biasing, the voltage divider is used to fix the DC _____ voltage.
base
In voltage divider biasing, the emitter resistor is used to fix the DC _____ current.
emitter
When analyzing the biasing in an RC coupled multi-stage amplifier, the coupling capacitors are considered to be _____ circuited.
open
In voltage divider biasing, bypassing the emitter resistor will cause the gain to ______.
increase
In voltage divider biasing, bypassing the emitter resistor will cause distortion to _______.
increase
In voltage divider biasing, bypassing the emitter resistor will cause ZIN to _______.
decrease
The text says that the main advantage of using voltage-mode feedback is its stability to operate with a _______ supply voltage.
low
In a 2-stage amplifier, the load on the first stage is the _______ of the second stage.
input impedance
The actual value of a transistor’s beta can be 50% higher or lower than the typical value given on its date sheet. (T/F)
True.
Transistor beta increases with temperature. (T/F)
True.
Variations in beta have no effect on Q-point. (T/F)
False.
Placing a resistor in series with the emitter will help stabilize the Q-point. (T/F)
True.
Placing a resistor in series with the emitter will reduce distortion. (T/F)
True.
Bypassing the emitter resistor with a capacitor will increase voltage gain. (T/F)
True.
Placing a resistor in series with the emitter will increase voltage gain. (T/F)
False.
A voltage-mode feedback biased amplifier will neither saturate nor cutt off for any values of RB and RC. (T/F)
True.
A voltage-mode feedback biased amplifier has a high voltage gain. (T/F)
True.
If the coupling capacitors in a multi-stage amplifier are too small, then gain is lost at higher signal. (T/F)
False.
For a 2-stage bipolar transistor amplifier to be direct coupled, one transistor must be NPN and the other must be PNP. (T/F)
True.
The input impedance of a transistor amplifier stage is higher if the emitter resistor is bypassed with a capacitor. (T/F)
False.
When voltage divider baising is used, the Q-point becomes essentially independant of beta as long as beta is above some minimum value. (T/F)
True.
Multistage, RC coupled amplifiers can amplify DC signals. (T/F)
False.
In a 2-stage amplifier, the load seen by the first stage is the input impedance of the second stage. (T/F)
True.
Which of these DC parameters are kept essentially constant by voltage divider biasing?
Base voltage
Voltage divider biasing uses a resistor in series with the emitter to:
keep DC emitter current constant
Voltage gain for an unbypassed voltage divider biased amplifier stage is in the range:
2 to 10
Voltage gain for a fully bypassed voltage divider biased amplifier stage is in the range:
50 to 500
Voltage gain for a split-emitter biased amplifier stage is in the range:
5 to 50
The value of VCE in a voltage-mode feedback biased transistor is:
approximately 2 volts
In addition to VCC, an emitter-biased NPN transistor typically requires:
a seperate negative voltage supply (VEE)
The number of ______ determines the atom’s atomic number.
protons
The outtermost shell or band of an atom is called the ______ band.
valence
Silicon atoms are held together by _______ bonding.
covalent
Pure silicon is called _______ material.
intrinsic
Adding a few atoms of impurities to pure silicon is called ______.
Doping
________ (A.K.A _______) atoms are used to make N-type material.
Pentavelent, donor
________ (A.K.A _______) atoms are used to make P-type material.
Trivalent, accepter
In P material, _____ carry the current.
holes
In N material, _______ carry the current.
electrons
A depletion regain contains no _____ carriers.
charge
A depletion region becomes wider in a _______ -biased PN junction.
reverse
The practical diode model contains an ideal diode in series with a ________.
battery
The complete/detailed diode model requires a ______ and ______.
battery, resistor
Real diodes have a small amount of reverse ______ current.
leakage
The _____ diode model is good for analyzing low-voltage circuits.
practical
The ______ diode model does not contain a battery.
ideal
The _____ diode model includes reverse leakage current.
complete/detailed
The ______ potential must be overcome to forward bias a PN junction.
barrier
One type of diode that has only a 0.3V forward drop is a ______ diode.
germanium/Schottky
The _____ material is the cathode in a PN junction diode.
N-type
The arrow in the diode symbol shows the direction of ______ current flow.
conventional
A depletion region forms in a _____ -biased PN junction.
reverse
Adding a few atoms of gallium or arsenic to silicon is called _____.
doping
An LED can have a foward drop in the range of _____ volts.
1.5V - 3V
The arrow in the diode schematic symbol points in the direction of electron flow. (T/F)
False
The key property of a diode is to let current flow through it in one direction only. (T/F)
True
To forward bias a diode, the anode must be positive with respect to the cathode. (T/F)
True
A device is called a semiconductor when current can flow through it only one way. (T/F)
Flase
The most common use for a diode is to change AC into DC. (T/F)
True
In addition to silicon, diodes also are commonly made from carbon. (T/F)
False
N-type material has more negative charge than positive charge. (T/F)
False
The atoms in crystal materual are held together with covalent bonds. (T/F)
True
Covalent bonds are relatively weak. (T/F)
False
The practical diode model contains a battery. (T/F)
True