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Industrial Electrons

Last updated 11:37 PM on 9/23/26
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175 Terms

1
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VCBO refers to…

collector to base breakdown voltage.

2
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VCEO refers to…

collector to emitter breakdown voltage.

3
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fT refers to…

gain-bandwidth product.

4
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The frequency at which the gain of a transistor drops to unity is called it’s…

gain-bandwidth product or fT.

5
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If a data sheet refers to MAX PD it is reffering to…

maximum power dissipation.

6
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The formula to calculate the dynamic resistance of the base-emitter junction is…

r’e = 25mV / IE

7
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A transistor switch should be in one of what two conditions…

saturation and cut-off.

8
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A NPN transistor always behaves exactly like two diodes joined node to node. (T/F)

False.

9
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Normally, the collector-base junction of a transistor is reversed-biased. (T/F)

True.

10
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To get collector current, the base-collector junction must be forward-biased. (T/F)

False.

11
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The emitter injects minority carriers into the base. (T/F)

True.

12
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The injection of minority carriers into the base is controlled by the base-emitter voltage. (T/F)

True.

13
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Base current is due to a small percentage of minority carriers combining with majority carriers. (T/F)

True.

14
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Transistors having the same part number will have approximately the same value for current gain. (T/F)

False.

15
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At saturation, collector current is limited by the base current. (T/F)

False.

16
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Collector-emitter current is effectively zero at cut-off. (T/F)

True.

17
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When measured with an Ohm-meter, the collector-base drop us typically less that the emitter-base drop. (T/F)

True.

18
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The current gain of a transistor will decrease above some signal frequency. (T/F)

True.

19
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The input resistance of a transistor is constant. (T/F)

False.

20
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The dynamic resistance of a PN junction depends on the current going through it. (T/F)

True.

21
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When a transistor is fully on, and its current is limited by the load resistance, it is:

in saturation.

22
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The B of a transistor is defined as:

collector current divided by base current.

23
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A transistor can be used as:

a switch and an amplifier.

24
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Another term for B is:

hFE.

25
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When the transistor is a one-transistor amplifier conducts during all parts of the signal, it is:

class A.

26
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When the transistor in a one-transistor amplifier conducts during half of the singal, it is:

class B.

27
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The Q-point of a transistor refers to its:

bias point.

28
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Gain means that, for the signal being amplified:

output power is greater than input power.

29
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Given a transistor with a fixed amount of base current, when VCE increases, IC will:

stay the same.

30
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A transistor amplifier is inverting when:

the output signal goes up when the input signal goes down.

31
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When a transistor is in cut-off:

collector current is zero.

32
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What can you say about a transistor if IC = 100mA when VBE = 0V:

it has failed shorted.

33
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What can you say about a transistor if IC = 0mA when VBE = 0.7V:

it has failed open.

34
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If VBE is measured to be 2.7V on an NPN transistor:

the base-emitter junction is open.

35
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Q-point instability is caused by

beta.

36
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As a transistor warms up, the value of its beta

increases.

37
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In voltage divider biasing, the voltage divider is used to fix the DC _____ voltage.

base

38
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In voltage divider biasing, the emitter resistor is used to fix the DC _____ current.

emitter

39
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When analyzing the biasing in an RC coupled multi-stage amplifier, the coupling capacitors are considered to be _____ circuited.

open

40
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In voltage divider biasing, bypassing the emitter resistor will cause the gain to ______.

increase

41
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In voltage divider biasing, bypassing the emitter resistor will cause distortion to _______.

increase

42
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In voltage divider biasing, bypassing the emitter resistor will cause ZIN to _______.

decrease

43
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The text says that the main advantage of using voltage-mode feedback is its stability to operate with a _______ supply voltage.

low

44
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In a 2-stage amplifier, the load on the first stage is the _______ of the second stage.

input impedance

45
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The actual value of a transistor’s beta can be 50% higher or lower than the typical value given on its date sheet. (T/F)

True.

46
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Transistor beta increases with temperature. (T/F)

True.

47
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Variations in beta have no effect on Q-point. (T/F)

False.

48
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Placing a resistor in series with the emitter will help stabilize the Q-point. (T/F)

True.

49
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Placing a resistor in series with the emitter will reduce distortion. (T/F)

True.

50
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Bypassing the emitter resistor with a capacitor will increase voltage gain. (T/F)

True.

51
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Placing a resistor in series with the emitter will increase voltage gain. (T/F)

False.

52
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A voltage-mode feedback biased amplifier will neither saturate nor cutt off for any values of RB and RC. (T/F)

True.

53
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A voltage-mode feedback biased amplifier has a high voltage gain. (T/F)

True.

54
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If the coupling capacitors in a multi-stage amplifier are too small, then gain is lost at higher signal. (T/F)

False.

55
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For a 2-stage bipolar transistor amplifier to be direct coupled, one transistor must be NPN and the other must be PNP. (T/F)

True.

56
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The input impedance of a transistor amplifier stage is higher if the emitter resistor is bypassed with a capacitor. (T/F)

False.

57
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When voltage divider baising is used, the Q-point becomes essentially independant of beta as long as beta is above some minimum value. (T/F)

True.

58
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Multistage, RC coupled amplifiers can amplify DC signals. (T/F)

False.

59
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In a 2-stage amplifier, the load seen by the first stage is the input impedance of the second stage. (T/F)

True.

60
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Which of these DC parameters are kept essentially constant by voltage divider biasing?

Base voltage

61
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Voltage divider biasing uses a resistor in series with the emitter to:

keep DC emitter current constant

62
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Voltage gain for an unbypassed voltage divider biased amplifier stage is in the range:

2 to 10

63
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Voltage gain for a fully bypassed voltage divider biased amplifier stage is in the range:

50 to 500

64
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Voltage gain for a split-emitter biased amplifier stage is in the range:

5 to 50

65
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The value of VCE in a voltage-mode feedback biased transistor is:

approximately 2 volts

66
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In addition to VCC, an emitter-biased NPN transistor typically requires:

a seperate negative voltage supply (VEE)

67
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The number of ______ determines the atom’s atomic number.

protons

68
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The outtermost shell or band of an atom is called the ______ band.

valence

69
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Silicon atoms are held together by _______ bonding.

covalent

70
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Pure silicon is called _______ material.

intrinsic

71
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Adding a few atoms of impurities to pure silicon is called ______.

Doping

72
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________ (A.K.A _______) atoms are used to make N-type material.

Pentavelent, donor

73
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________ (A.K.A _______) atoms are used to make P-type material.

Trivalent, accepter

74
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In P material, _____ carry the current.

holes

75
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In N material, _______ carry the current.

electrons

76
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A depletion regain contains no _____ carriers.

charge

77
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A depletion region becomes wider in a _______ -biased PN junction.

reverse

78
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The practical diode model contains an ideal diode in series with a ________.

battery

79
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The complete/detailed diode model requires a ______ and ______.

battery, resistor

80
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Real diodes have a small amount of reverse ______ current.

leakage

81
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The _____ diode model is good for analyzing low-voltage circuits.

practical

82
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The ______ diode model does not contain a battery.

ideal

83
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The _____ diode model includes reverse leakage current.

complete/detailed

84
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The ______ potential must be overcome to forward bias a PN junction.

barrier

85
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One type of diode that has only a 0.3V forward drop is a ______ diode.

germanium/Schottky

86
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The _____ material is the cathode in a PN junction diode.

N-type

87
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The arrow in the diode symbol shows the direction of ______ current flow.

conventional

88
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A depletion region forms in a _____ -biased PN junction.

reverse

89
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Adding a few atoms of gallium or arsenic to silicon is called _____.

doping

90
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An LED can have a foward drop in the range of _____ volts.

1.5V - 3V

91
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The arrow in the diode schematic symbol points in the direction of electron flow. (T/F)

False

92
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The key property of a diode is to let current flow through it in one direction only. (T/F)

True

93
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To forward bias a diode, the anode must be positive with respect to the cathode. (T/F)

True

94
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A device is called a semiconductor when current can flow through it only one way. (T/F)

Flase

95
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The most common use for a diode is to change AC into DC. (T/F)

True

96
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In addition to silicon, diodes also are commonly made from carbon. (T/F)

False

97
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N-type material has more negative charge than positive charge. (T/F)

False

98
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The atoms in crystal materual are held together with covalent bonds. (T/F)

True

99
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Covalent bonds are relatively weak. (T/F)

False

100
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The practical diode model contains a battery. (T/F)

True