V-I Characteristics of Semiconductor Diode

Free electrons

in the p- type and holes in the n- type are called minority carriers.

bias condition

In forward , p- type of the semiconductor diode is connected to the positive terminal and the n- type is connected to the negative terminal of the external voltage.

reverse bias condition

In , the p- type of the pn junction is connected to the negative terminal and the n- type is connected to the positive terminal of the external voltage.

x axis

Normally the voltage is taken along the of the graph in volts and current taken along the y- axis in amperes.

bias condition

In zero , no external voltage is applied to the semiconductor diode, i.e., the circuit is open.

Junction Breakdown

Characterized by sudden increase of reverse current and a sudden fall of resistance of barrier region.

Minority Carriers

Free electrons in p-type and holes in n-type

Reverse Saturation Current

Denoted by IS, it is a small current of order micro ampere which flows through the circuit when diode is in reverse bias.

Resistance

It is Voltage divided by Current

V-I Characteristics

It is the curve between voltage across the junction and the current through the circuit.

Zero Bias condition

No external voltage is applied to the semiconductor

Forward bias

p-type connected to positive terminal and n-type connected to negative terminal

Forward voltage

0.7 V for Si or Silicon and 0.3 V for Ge or Germanium

Graphical forward condition

the current first increases slowly and the curve in non-linear

Reverse bias

p-type of the pn junction is connected to the negative terminal and the n-type is connected to the positive terminal of the external voltage