V-I Characteristics of Semiconductor Diode

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15 Terms

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Free electrons
________ in the p- type and holes in the n- type are called minority carriers.
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bias condition
In forward ________, p- type of the semiconductor diode is connected to the positive terminal and the n- type is connected to the negative terminal of the external voltage.
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reverse bias condition
In ________, the p- type of the pn junction is connected to the negative terminal and the n- type is connected to the positive terminal of the external voltage.
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x axis
Normally the voltage is taken along the ________ of the graph in volts and current taken along the y- axis in amperes.
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bias condition
In zero ________, no external voltage is applied to the semiconductor diode, i.e., the circuit is open.
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Junction Breakdown
Characterized by sudden increase of reverse current and a sudden fall of resistance of barrier region.
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Minority Carriers
Free electrons in p-type and holes in n-type
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Reverse Saturation Current
Denoted by IS, it is a small current of order micro ampere which flows through the circuit when diode is in reverse bias.
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Resistance
It is Voltage divided by Current
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V-I Characteristics
It is the curve between voltage across the junction and the current through the circuit.
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Zero Bias condition
No external voltage is applied to the semiconductor
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Forward bias
p-type connected to positive terminal and n-type connected to negative terminal
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Forward voltage
0.7 V for Si or Silicon and 0.3 V for Ge or Germanium
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Graphical forward condition
the current first increases slowly and the curve in non-linear
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Reverse bias
p-type of the pn junction is connected to the negative terminal and the n-type is connected to the positive terminal of the external voltage