MCQs SOLID STATE DEVICES

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Last updated 2:40 PM on 8/18/26
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125 Terms

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Carbon

A semiconductor element that is mainly used in the production of resistors

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Three valence electrons

The number of valence electrons of gallium

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Five valence electrons

The number of valence electrons of arsenic

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Ionization potential

This is the potential required to remove a valence electron from the atomic structure

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IIIA, IVA, V

What groups do most semiconductors belong?

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1.5×10 raised to 10

At room temperature there are approximately this value of free carriers in a 1 cm cube of intrinsic silicon

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Intrinsic carriers

The free electrons in a material due only to external causes are referred to as

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2.5×10 raised to 13

At room temperature there are approximately this value of free carriers in a 1 cm cube of intrinsic silicon material

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Relative mobility

This is the ability of the free carriers to move throughout the material

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Drift velocity

the average velocity at which free charge carriers move through a conductor because of an applied electric field.

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Doping compensation

The addition of donor impurities to a P-type semiconductor or of acceptor impurities to an n- type semiconductor

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Transistor, junction, diode, solid state device

These are electronic device devices, which operates by which of the movement of electrons within a solid piece of semiconductor material

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It decreases with an increase in light intensity

In addition to rectifying properties, selenium has the pro of being light sensitive how is selenium resistance affected by light?

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Czochralski Process

This is a method of crystal growth used to obtain single crystals of semiconductors

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Higher

  • The farther an electron is from the nucleus, the ____ Is the energy state

  • It is farther

  • It has less attraction

  • It has less negative potential energy


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The breaking of covalent bonds

What process takes place within the semiconductor to cause hole flow?

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For high temperature and high power requirement of semiconductors, the material used is

Silicon carbide

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The energy difference across the forbidden gap

What determines whether the assorted material with as a conductor semiconductor or an insulator?

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Edison effect

The emission of electrons from hot bodies

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Lossev effect

This is the radiation that results from the recombination of charge carriers injected in a PN or PIN Junction, which is biased in forward direction

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10^12

At room temperature, an intrinsic silicon material will have about one free electron for every ___ atoms

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Less than 100V - 400V max

This is the breakdown voltage of Germanium

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Vt = kT/q

Thermal voltage formula

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Intrinsic

A material which has an equal number of electron hole pairs and conducting electrons is known as what type of semiconductor material

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Trivalent

The semiconductor doping impurities of arsenic, antimony and bismuth are classified as what type of impurities

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Neutrally charged. This is because the holes in the electrons just allows current flow not make it charged

P-type germanium and n-type silicon is ___ charged.

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Reverse saturation current

The current that exists under reverse bias condition

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Open switch

A reversed bias diode is like a

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1N

The part number for a diode will always begin with the prefix

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1 PN Junction

The diode prefix 1N, the number one indicates

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Photocells

Selenium works especially well in

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2.5mV

In the forward, bias region, the characteristics of a silicon diode shifts to the left at a rate of this value per centigrade degree increase in temperature

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10

In the reverse bias region, the reverse saturation current of a silicon diode doubles for every ____ degrees Celsius rise in temperature

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higher

The lower the Q point of operation, the ___ is the AC resistance

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Galena

Early semiconductor diets are made mostly of minerals like

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0.2V

Silicon has a built-in potential of 0.7 V Germanium is 0.3 V while Schottky has

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Avalanche diodes

These are diodes which operates in reverse breakdown voltage

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6.2V

Avalanche diodes, has breakdowns of about

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Esaki diode

Other name for tunnel diode

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Quantum tunneling

Tunnel diode exhibits negative resistance, which is caused by

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Trickle charging

This is when charging does not occur during the entire cycle, but only when the charging voltage is more than the voltage of the battery

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Inductive kick

Trying to change the current, one inductive element took quickly may result in this which could damage surrounding elements

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Snubber

One of the cheapest but most effective ways to protect the switching system is to place a capacitor called ___ across the coil

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Decrease it

How does forward biasing affect junction resistance?

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They move away from the junction

When the PN Junction die is reversed, biased what happens to the majority carriers

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Zeroing

This is a process whereby an applied form of zero average value is changed to one that has a DC level.

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Voltage regulator

Avalanche voltage is routinely exceeded when a PN junction acts as E

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Barrier Junction

The placing of an impurity on a semiconductor of the opposite impurity and fusing the two together produce what type of semiconductor junction

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Depletion region

After the junction combination process has reached equilibrium. What is the area that surrounds the junction called?

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As mixers, as switches, as detectors

Signal diodes are used for which of the following purposes

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CR3

This Alphanumeric code correctly identifies the diode, crystal rectifier number 3 in a circuit

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Do not pry the diode from the circuit, do not use excessive heat to remove the diode, do not remove the dial from the circuit while voltage is applied

When replacing a diode in a circuit, which of the following safety precautions should you observe in removing the diode from the circuit?

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Two equal voltages from one transformer

The purpose of a center tap in a transformer is to provide

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term image

Ripple frequency formula

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Vave = Vp / pi

Average voltage output of a halfwave rectifier

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Vave = Vp*(2/pi)

Average voltage output of a full wave rectifier

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RC capacitor input

What type of filter is the most basic power supply filter?

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0%

In a voltage regulator, what percent of regulation would be ideal?

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Either the load has infinite resistance or it is open

A no-load condition means that

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<p></p>


Power supply percent of regulation formula

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The peak value of the rectified voltage

The ideal DC output voltage of a capacitor input filter is equal to

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r=Vrms(ripple)peaktopeakVdcr=\frac{Vrms(ripple)peak-to-peak}{Vdc}

Ripple factor formula

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Vrip=IdcfC=(VdcppRload)fCVrip=\frac{Idc}{fC}=\frac{(\frac{Vdc-pp}{Rload})}{fC}

Ripple voltage formula

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Changes in output, voltage, and input voltage

Line regulation is determined by

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Changes in low current and output voltage

Low regulation is determined by

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Temperature of operation

The zener potential of a zener diode is very sensitive to the

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Zener effect

Which breakdown theory explains the action that takes place in a heavily dope PN junction with reverse bias below 5 V

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Zener potential

The reverse breakdown voltage of a semiconductor diode will increase or decrease with temperature depending on the

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More positive than the anode

The cathode of a Zener diode in a voltage regulator is normally

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Zener breakdown

If a certain zener diode has a voltage of 3.6 V it operates in

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<p>Change in Zener voltage divided by the change in Zener current</p>

Change in Zener voltage divided by the change in Zener current

Formula for the impedance of a Zener diode

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It will increase

An increase in reverse bias of a varactor will have what effect on the width of the depletion region

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It will decrease

What happens to the capacitance of a varactor diode as the reverse bias is increased

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As a tuning device

In electronic circuits, how is the varactor used?

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Reverse

What would a varactor be normally biased?

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Ge and GaAs

What are the two materials used with tunnel diodes?

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Tunnel / Esaki diodes

Is a heavily doped semiconductor p-n junction that uses quantum tunneling to let current flow at very low voltages. It shows negative resistance, meaning current drops as voltage rises.

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No minority carries

What makes Schottky diodes high speed types?

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A CMOS integrated circuit

Requires very little power to function

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The phase of an applied ac signal

This is an unimportant factor concerning the frequency at which a PN Junction will work effectively

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Can cause objectionable signal distortion

A diode audio limiter circuit

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A microwave communications device

A Gunnplexer can be used as a

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Gunnplexer

a compact microwave transceiver module that combines a Gunn diode oscillator (to generate a microwave signal) and a Schottky diode mixer (to receive signals) inside a single waveguide cavity.

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Computer card readers, photographic light meters, optic scanning equipment

These are the uses of photodiodes

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Photocell

This is the device which is similar in operation to a photodiode

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Infrared

Diodes constructed of GaAs emit light in the ___ zone

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Combination of Blue LED with yellow Scintillator Coat / combination of 3 LEDs

White LED is normally made of

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Energy bandgap

The wavelength and frequency of light of a specific color are directly related to

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Decreases with light intensity when reversed bias

The internal resistance of a photodiode

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Optoisolator

Suppose you want a circuit to operate in a stable manner when the load impedance varies. you might consider a coupling method that employs

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Electron energy level changes

Admission of energy in an IRED INFRARED EMITTING DIODE is caused by

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Point contact

What term is used for a semiconductor that has three or more elements?

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They generate less noise, they handle more power, they provide higher current and voltage gain

Junction transistors have replaced point contact transistors for the following reasons

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This is the emitter in the type of transistor

In a schematic, what is indicated by the angular line with the arrowhead in the direction of the arrow

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Five

GaAs transistor has _____ times the operating speed of silicon Si

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Passivating

What is the layer which protects junctions in transistors called?

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Overlay

What is the name of the type of high frequency transistors

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0.92 - 0.998

Alpha typically extends from this range of values

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AC alpha

This is formally called the common base, short circuit, amplification factor

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50-400

Beta typically extent from about this range, but mostly in the mid range