diode/ power supply

0.0(0)
studied byStudied by 0 people
learnLearn
examPractice Test
spaced repetitionSpaced Repetition
heart puzzleMatch
flashcardsFlashcards
Card Sorting

1/30

encourage image

There's no tags or description

Looks like no tags are added yet.

Study Analytics
Name
Mastery
Learn
Test
Matching
Spaced

No study sessions yet.

31 Terms

1
New cards

Conductors have

A) loosely bound valance electrons and low resistance

2
New cards

which of the following is not a conductor

C. Silicon

3
New cards

how many Valence electrons do semiconductors have?

A. 4

4
New cards

At room temperature pure silicon crystals conduct

A. very poorly

5
New cards

As room temperature increases, the resistance of a conductor will

A. increase

6
New cards

As temperature increases, the resistance of a semiconductor will

B. decrease

7
New cards

If a silicon crystal is doped with a material having five valence electrons

C. A N-type semiconductor is formed

8
New cards

If a silicon crystal is doped with a material having three valence electrons

B. P-type semiconductor is formed

9
New cards

the direction of electron current is

A. Neg to Pos

10
New cards

Doping a semiconductor

C. decreases its resistance

11
New cards

In a PN junction diode, the depletion region is formed by

A. electrons crossing the junction and filling holes

12
New cards

The depletion region of a PN junction diode acts as

B. an insulator

13
New cards

With no external bias applied, the depletion region is limited or balanced by

C. the barrier potential

14
New cards

In a PN junction diode, FWD can

  • Force the majority carriers

  • collapse the depletion region

  • cause conduction from cathode to anode

15
New cards

Excessive reverse bias may cause a silicon diode to

A. avalanche

16
New cards

In order for a diode to be FWD biased

  • The P-type material must be positive with respect to the N-type material

  • the anode must be positive with respect to the cathode

  • the electron current must be flowing against the arrow on the schematic symbol

17
New cards

at high temperatures, the FWD voltage drop across a diode can be expected to

C. Be less than it is at low temperature

18
New cards

An ohmmeter is connected across diode both ways, and rather low resistance reading is obtained both times, the diode is

Shorted

19
New cards

The band on a diode identifies the

cathode

20
New cards

Rectifier diodes are used to

C. change AC into DC

21
New cards

In rectifier circuits, the positive end of the load is the one that connects

B. the cathode of the rectifier

22
New cards

If the diode in a half-wave rectifier circuit is reversed, the voltage across the load will

B-reverse in polarity

23
New cards

The effectiveness of a capacitor filter is determined by

-The size of the capacitor

-the amount of current

-the ripple frequency

24
New cards

Full wave rectifier are often preferred over half-wave rectifier because

-can deliver more power and are easier to filter

25
New cards

if the load should be disconnected from the regulator, the power dissipation in R1 will

A- remain the same

26
New cards

If the load should be disconnected from the regulator, the power dissipiation in D1 will

C-Increase

27
New cards

Band Gap

The energy that needs to be applied to an electron in order for it to move from the valence electron to the conduction band

28
New cards

Fermi level

the energy level half way between the valence and conduction bands

29
New cards

if band gap overlaps

good conductor

30
New cards

If band gap is far apart

Good insulator

31
New cards

Doping

adding impurities to the silicon crystal lattice to increase the number of carriers