Electronics 245 - Week 1 - Lecture 2

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Last updated 12:38 PM on 7/1/26
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22 Terms

1
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Define an insulator

  • Materials in which electricity does not flow

  • glass, wood, plastic

2
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Define a conductor

  • Material in which electricity flows due to low resistiance

  • aluminium, copper, etc

3
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Define a semiconductor

  • Materials with a electrical conductivity between conductors and insulators

4
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Define the conduction band

  • energy levels where an electron is allowed to freely move through a material

5
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Define the valence band

  • The energy levels that electrons possess when in the outer shell of atoms of a material

6
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Define band gap

  • The difference in energy between the conduction band and the valence band

  • Represents the amount of energy required to break covalent bonds

7
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Describe Valency

  • Uses the Bohr atomic model

  • valence electrons are in the outer shell of an atom

  • valence electrons are responsible for chemical reactivity

8
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Define an element

  • substances made up of one type of atom

9
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Define a compound

  • substances made of more than type of atom/element

10
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State the 2 most common pure elemental semiconductors

  • Silicon

  • Germanium

11
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Describe the silicon crystal lattice

  • 4 valence electrons

    • can form covalent bonds with 4 other silicon atoms

    • all used in bonding

<ul><li><p>4 valence electrons</p><ul><li><p>can form covalent bonds with 4 other silicon atoms</p></li><li><p>all used in bonding</p></li></ul></li><li><p></p></li></ul><p></p>
12
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Describe the breaking of the covalent bonds of a silicon crystal lattice at T = 0 K

  • absolute zero

  • electrons dont have enough energy to break covalent bonds

  • acts as insulator

<ul><li><p>absolute zero</p></li><li><p>electrons dont have enough energy to break covalent bonds</p></li><li><p>acts as insulator</p></li></ul><p></p>
13
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Describe the breaking of the covalent bonds of a silicon crystal lattice at T > 0 K

  • Electrons can obtain enough energy to break its covalent bond

<ul><li><p>Electrons can obtain enough energy to break its covalent bond</p></li></ul><p></p>
14
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Define bandgap energy

  • minimum energy required to break a covalent bond

15
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Define Ev and Ec

  • Ev = max energy of valence energy band

  • Ec = min energy of conduction band

16
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Describe the conduction, valence and forbidden bandgaps of:

  • Insulators

  • Semiconductors

  • Conductors

  • Insulators have a very large forbidden band gap

    • meaning electrons wont move to the conductive band without a significant amount of energy

  • Semiconductors have a relatively small forbidden gap

    • therefore, some energy supplied can induce conductivity

    • no energy means no conductivity

  • Conductor’s valence gap and conduction gap overlap

    • no energy is required for the material to be conductive

<ul><li><p>Insulators have a very large forbidden band gap </p><ul><li><p>meaning electrons wont move to the conductive band without a significant amount of energy</p></li></ul></li><li><p>Semiconductors have a relatively small forbidden gap</p><ul><li><p>therefore, some energy supplied can induce conductivity</p></li><li><p>no energy means no conductivity</p></li></ul></li><li><p>Conductor’s valence gap and conduction gap overlap</p><ul><li><p>no energy is required for the material to be conductive</p></li></ul></li></ul><p></p>
17
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Describe the concept of a “hole”

  • when a covalent bond breaks, an empty positive space remains

  • adjacent electrons can occupy that “hole” and create a “hole” where they previously were

  • thus there is a positive moving charge

  • holes are charge carriers

<ul><li><p>when a covalent bond breaks, an empty positive space remains</p></li><li><p>adjacent electrons can occupy that “hole” and create a “hole” where they previously were</p></li><li><p>thus there is a positive moving charge</p></li><li><p>holes are charge carriers</p></li></ul><p></p>
18
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Describe an intrinsic semiconductor

  • semiconductor that is made of one element

  • concentration of electrons and holes are equal

19
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State the formula for the number of electrons in the conduction band in an intrinsic semiconductor, ni

  • ni = BT ^ (3/2) * e ^ (-Eg / 2kT)

    • 𝐵– coefficient for semiconductor material, in cm^(−3) K^(− 3/2)

    • 𝑇– temperature in Kelvin, K

    • 𝐸𝑔– bandgap energy in eV

    • 𝑘– Boltzmann’s constant = 86 x 10-6eV/K

<ul><li><p>ni = BT ^ (3/2) * e ^ (-Eg / 2kT)</p><ul><li><p>𝐵– coefficient for semiconductor material, in cm^(−3) K^(− 3/2) </p></li><li><p>𝑇– temperature in Kelvin, K</p></li><li><p>𝐸𝑔– bandgap energy in eV</p></li><li><p>𝑘– Boltzmann’s constant = 86 x 10-6eV/K</p></li></ul></li></ul><p></p>
20
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Describe extrinsic semiconductors

  • Made of more than one type of element

  • when low concentration of free electrons in instrinsic:

    • low currents

<ul><li><p>Made of more than one type of element</p></li><li><p>when low concentration of free electrons in instrinsic:</p><ul><li><p>low currents</p></li></ul></li></ul><p></p>
21
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Describe the 2 types of extrinsic semiconductors

  • n-type

    • group V impurities are added

    • donor impurities are present, which donates an electron

    • number of electrons > number of holes

  • p-type

    • group III impurities are added

    • acceptor impurities are present, which accept an electron

    • number of holes > number of electrons

<ul><li><p>n-type</p><ul><li><p>group V impurities are added</p></li><li><p>donor impurities are present, which donates an electron</p></li><li><p>number of electrons &gt; number of holes</p></li></ul></li><li><p>p-type</p><ul><li><p>group III impurities are added</p></li><li><p>acceptor impurities are present, which accept an electron</p></li><li><p>number of holes &gt; number of electrons </p></li></ul></li></ul><p></p>
22
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Describe the conductivity in an Extrinsic Semiconductor

  • no po = ni²

    • no = conc of free electrons

    • po = conc of holes

    • ni = conc of intrinsic carrier

  • if donor conc, Nd > ni

    • no = Nd

    • po = ni² / Nd

  • if acceptor conc, Na > ni

    • po = Na

    • no = ni² / Na

<ul><li><p>no po = ni²</p><ul><li><p>no = conc of free electrons</p></li><li><p>po = conc of holes</p></li><li><p>ni = conc of intrinsic carrier</p></li></ul></li><li><p>if donor conc, Nd &gt; ni</p><ul><li><p>no = Nd</p></li><li><p>po = ni² / Nd</p></li></ul></li><li><p>if acceptor conc, Na &gt; ni</p><ul><li><p>po = Na</p></li><li><p>no = ni² / Na</p></li></ul></li></ul><p></p><p></p>