Electronic Principles, Semiconductor Materials (3a)

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15 Terms

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What is the atomic structure of matter?

  • Matter is made of elements, each composed of atoms of the same kind.

  • Atoms:

    • Nucleus (protons + neutrons, except H) → dense, positively charged core

    • Electrons orbit nucleus at large distances relative to its size

  • Electron: mass = 9.11×10−319.11 \times 10^{-31}9.11×10−31 kg, charge = −1.602×10−19-1.602 \times 10^{-19}−1.602×10−19 C

  • Proton: mass = 1.673×10−271.673 \times 10^{-27}1.673×10−27 kg (1836 × electron), charge = +1.602×10−19+1.602 \times 10^{-19}+1.602×10−19 C

  • Neutron: no charge, mass ≈ proton’s mass

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What are the atomic structures of hydrogen, helium, and carbon?

  • Hydrogen: 1 proton in nucleus, 1 electron orbiting (~10−1010^{-10}10−10 m orbit diameter).

  • Helium: Nucleus = 2 protons + 2 neutrons; 2 electrons in K-shell.

  • Carbon: Nucleus = 6 protons + 6 neutrons (charge = +6e); 6 electrons (2 in K-shell, 4 in L-shell).

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What are conduction electrons and ions in atomic structure?

  • Electrons farther from the nucleus are easier to detach.

  • In metals, outer electrons can become free (conduction electrons), moving randomly but drifting under external influence.

  • An ion is an atom that has lost or gained electrons:

    • Lost electrons → Positive ion (more protons than electrons).

    • Gained electrons → Negative ion.

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What is a covalent bond in atomic structure?

  • In a covalent bond, atoms share valence electrons with adjacent atoms.

  • Example: Atom A shares its 4 valence electrons with atoms B, C, D, and E.

  • Each shared pair of electrons orbits around both bonded atoms, holding them together.

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What is an N-type semiconductor and how is it formed?

  • Formed by doping silicon/germanium with a pentavalent element (e.g., phosphorus, arsenic, antimony).

  • 4 of the 5 valence electrons form covalent bonds; the 5th becomes a free electron.

  • Donor atoms (pentavalent impurities) introduce these free electrons.

  • The crystal remains electrically neutral, but conductivity increases due to mobile electrons.

  • Called N-type (negative-type) semiconductor because electrons are the majority carriers.

<ul><li><p>Formed by doping silicon/germanium with a <strong>pentavalent element</strong> (e.g., phosphorus, arsenic, antimony).</p></li><li><p>4 of the 5 valence electrons form covalent bonds; the <strong>5th becomes a free electron</strong>.</p></li><li><p><strong>Donor atoms</strong> (pentavalent impurities) introduce these free electrons.</p></li><li><p>The crystal remains <strong>electrically neutral</strong>, but conductivity increases due to mobile electrons.</p></li><li><p>Called <strong>N-type (negative-type) semiconductor</strong> because electrons are the majority carriers.</p></li></ul><p></p>
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How do donor atoms and an applied potential difference affect electron movement in an N-type semiconductor?

  • Donors provide fixed positive ions and equal numbers of free electrons.

  • More impurity → more free electrons per unit volume → higher conductivity.

  • With no potential difference (p.d.), electrons move randomly (no net drift).

  • With a cell connected (S positive, T negative), the electric field causes a drift of electrons toward the positive electrode (S), superimposed on their random motion.

  • Electrons leaving the semiconductor at S are replaced by electrons entering at T, keeping density

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What is a P-type semiconductor and how is it formed?

  • Made by doping silicon with a trivalent element (e.g., indium, gallium, boron, aluminum).

  • Trivalent atom provides 3 valence electrons, leaving one incomplete bond (hole).

  • A hole is a vacancy that behaves like a positive charge carrier.

  • Holes attract electrons from neighboring atoms, causing the hole to move through the lattice.

  • Thus, in P-type semiconductors, holes are the majority carriers.

<ul><li><p>Made by doping silicon with a <strong>trivalent element</strong> (e.g., indium, gallium, boron, aluminum).</p></li><li><p>Trivalent atom provides <strong>3 valence electrons</strong>, leaving one <strong>incomplete bond (hole)</strong>.</p></li><li><p>A <strong>hole</strong> is a vacancy that behaves like a positive charge carrier.</p></li><li><p>Holes attract electrons from neighboring atoms, causing the <strong>hole to move</strong> through the lattice.</p></li><li><p>Thus, in <strong>P-type semiconductors</strong>, <strong>holes are the majority carriers</strong>.</p></li></ul><p></p>
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How do holes behave in a P-type semiconductor without an external electric field?

  • Holes move randomly between covalent bonds, at about half the speed of free electrons.

  • Random movement keeps hole density uniform, preventing charge buildup.

  • Each atom with a hole has a net positive charge (e).

  • The movement of holes can be regarded as the movement of positive charges within the P-type semiconductor.

<ul><li><p><strong>Holes move randomly</strong> between covalent bonds, at about <strong>half the speed of free electrons</strong>.</p></li><li><p>Random movement keeps <strong>hole density uniform</strong>, preventing charge buildup.</p></li><li><p>Each atom with a hole has a <strong>net positive charge (e)</strong>.</p></li><li><p>The <strong>movement of holes</strong> can be regarded as the movement of <strong>positive charges</strong> within the P-type semiconductor.</p></li></ul><p></p>
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What defines a P-type semiconductor and what are acceptors?

  • Holes move randomly, about half the speed of electrons, keeping hole density uniform.

  • Each atom with a hole is an ion with net positive charge (e).

  • Hole movement is treated as positive charge movement.

  • P-type semiconductors are formed when silicon/germanium is doped with trivalent impurities.

  • These impurities are called acceptors because they can accept electrons from nearby atoms.

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What happens at the junction of a P-type and N-type semiconductor in a diode?

  • P-type: has mobile holes + fixed negative ions (neutral overall).

  • N-type: has mobile electrons + fixed positive ions (neutral overall).

  • Diffusion: Holes move into N-region, electrons move into P-region.

  • This creates region A (negative) and region B (positive) near the junction.

  • These charges form a potential barrier at the junction, preventing further carrier migration.

<ul><li><p><strong>P-type:</strong> has mobile holes + fixed negative ions (neutral overall).</p></li><li><p><strong>N-type:</strong> has mobile electrons + fixed positive ions (neutral overall).</p></li><li><p><strong>Diffusion:</strong> Holes move into N-region, electrons move into P-region.</p></li><li><p>This creates <strong>region A (negative)</strong> and <strong>region B (positive)</strong> near the junction.</p></li><li><p>These charges form a <strong>potential barrier</strong> at the junction, preventing further carrier migration.</p></li></ul><p></p>
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How does a diode behave under forward bias?

  • Forward bias: Positive voltage on P-side (S), negative on N-side (T).

  • Holes drift toward the junction in the P-region; electrons drift toward the junction in the N-region.

  • At the junction, electrons and holes combine, allowing current to flow.

  • Current results from:

    • Hole flow in P-region

    • Electron flow in N-region

    • Recombination near the junction

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How does a diode behave under reverse bias, and what are minority carriers?

  • Reverse bias: P-side connected to negative, N-side to positive.

  • Holes move toward negative electrode, electrons toward positive, creating a depletion layer with almost no carriers → junction acts as an insulator.

  • Small current exists due to thermally generated electron–hole pairs.

    • Lifetime: ~50 ms in silicon, ~100 ms in germanium

    • Rate increases with temperature, reducing intrinsic resistance.

  • Minority carriers: Thermally generated carriers that are few compared to majority carriers.

    • P-type: holes = majority, electrons = minority

    • N-type: electrons = majority, holes = minority

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What is the reverse current in a silicon diode under reverse bias?

  • Reverse bias: Current remains nearly constant from ~0.1 V up to the breakdown voltage.

  • This constant current is called the saturation current (IsI_sIs​).

  • In practice, reverse current slightly increases with voltage due to surface leakage.

<ul><li><p><strong>Reverse bias:</strong> Current remains nearly constant from ~0.1 V up to the <strong>breakdown voltage</strong>.</p></li><li><p>This constant current is called the <strong>saturation current (IsI_sIs​)</strong>.</p></li><li><p>In practice, reverse current <strong>slightly increases</strong> with voltage due to <strong>surface leakage</strong>.</p></li></ul><p></p>