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Si Wafer
thin, but not too thin
round and flat shape
single crystal
Oxidization
Add oxygen either from O2 or H2O
Create a layer of SiO2
this is ideal because Si/SiO2 have a clean bonding structure (no loose bonds)
SiO2 is not water soluble
Spin Coating
Add a layer of Photoresist
Has three variables
Omega → the rotational speed of the disk
# of drops
time
Photolithography
Exposes the Photoresist to light (Electromagnetic Wave)
Chemically changes Photoresist
E = hv (Planck’s constant)(frequency)
Waves speed = (wavelength)(frequency)
E = [(plancks constant)(wave speed)]/wavelength
Develop
Removes the section of Photoresist exposed to light67
Etch
Wet etch → HF (danger)
Dry etch → Plasma (pros: vert. sidewall, cons: complicated to do)
Strip the Photoresist
take off all of the photoresist
Dopants
Two types:
diffusion
ion implantation
converts the Si to either:
n-type (As, P)
p-type (B, Ga)
Spincoat
add another layer of Photoresist
Photolithography (Mask 2)
chemically change the photoresist
Develop
Remove the parts of the photoresist that were exposed
Metallization
Add a thin metallic layer onto your substrate
Strip the Photoresist
remove all your photoresist
Failure Analysis
investigate why your device functions/malfunctions