1/39
Flashcards for EAC 4: Vacuum and Semiconductor Theory
Name | Mastery | Learn | Test | Matching | Spaced |
---|
No study sessions yet.
How many electrons are there in the fourth orbit of a copper atom?
A. 1 C. 2
B. 3 D. 4
1
The maximum permissible number of electrons in the third orbit is
A. 8 C. 18
16 D. 32
18
Valence orbit is the other term for .
A. Outer orbit C. 4th orbit
B. 3rd orbit D. 2nd orbit
Outer orbit
K shell means _.
A. 1st orbit C. 3rd orbit
B. 2nd orbit 4. 4th orbit
1st orbit
The electrons in the largest orbit travel _ than the electrons in the smaller orbits.
A. More slowly C. A bit slower
B. Faster D. Very fast
Faster
What orbit controls the electrical properties of the atom?
A. Valence orbit C. Fourth orbit
First orbit D. M shell
Valence orbit
What substance contains atoms with several bands of electrons but with only one valence electrons?
A. Insulator C. Semiconductor
B. Conductor D. Dielectric
Conductor
Pure silicon crystal atoms contain how many valence electrons as a result of covalent bonding?
A. 1 C. 8
B. 4 D. 16
8
Each atom in a silicon crystal has how many electrons in its valence orbit?
A. 8 C. 32
B. 2 D. 4
4
Lifetime is the amount of time between the creation and disappearance of a/an:
A. Free electron C. Neutron
B. Proton D. Ion
Free electron
Which is a donor atom?
A. Trivalent C. Aluminum
B. Boron D. Pentavalent
Pentavalent
Silicon that has been doped with a pentavalent impurity is called a/an:
A. N-type semiconductor
B. P-type semiconductor
C. Intrinsic semiconductor
D. Extrinsic semiconductor
N-type semiconductor
In an n-type semiconductor, free electrons are called __.
A. Minority carriers
B. Valence electrons
C. Majority carriers
D. Charge carriers
Majority carriers
What is the barrier potential of germanium at 25 oC?
A. 0.7V C. 0.3V
B. 0.5V D. 1.3V
0.3V
An extrinsic semiconductor is a __.
A. Doped semiconductor
B. Pure semiconductor
C. Good insulator
D. Superconductor
Doped semiconductor
Each pair of positive and negative ions at the junction is called a/an .
A. Anion C. Cation
B. Positron D. Dipole
Dipole
In an pn-junction diode under reverse biased, the magnitude of electric field is maximum at:
A. The edge of depletion region on the n-side.
B. The edge of depletion region on the p-type.
C. The center of the n-type region.
D. The PN-junction.
The PN-junction.
Under low level injection assumption, the injected minority carrier current for an extrinsic semiconductor is essentially the:
A. Diffusion C. Drift current
B. Induced current D. Recombination current
Diffusion
The band gap of silicon at room temperature:
A. 1.3 eV C. 1.1 eV
B. 0.7 eV D. 1.4 eV
1.1 eV
What causes the depletion region?
A. Doping C. Barrier potential
B. Diffusion D. Recombination
Diffusion
Another name for vacuum tube diode.
A. Thyratron C. Audion
B. Fleming valve D. Detector
Fleming valve
Which terminal of the tetrode is nearest to its anode?
A. Screen grid C. Cathode
B. Supressor grid D. Control grid
Screen grid
It is the maximum permissible reverse voltage for the diode.
A. PIV C. Barrier voltage
B. Maximum voltage D. Tolerable voltage
PIV
What is another name for clamper?
A. Slicer C. Clipper
B. Limiter D. DC restorer
DC restorer
The process of converting AC to pulsating DC signal?
A. Recombination C. Charging
B. Rectification D. Filtering
Rectification
A full wave rectifier circuit utilizing a full input cycle has a ripple frequency in its output equal to:
A. 60 Hz C. 110 Hz
B. 120 Hz D. 220 Hz
120 Hz
What is the maximum efficiency of full wave rectifier?
A. 50% C. 40.6%
B. 81.2% D. 100%
81.2%
It is the remaining variation in the output of a power supply filter.
A. Residual voltage C. Offset voltage
B. Ripple D. Induced voltage
Ripple
What type of bias is required for an LED to produce luminescence?
A. Reversed C. Forward
B. Fixed D. Zero
Forward
A dc voltage supply is measured at 50V and drops to 45V when load is connected. What is the value of voltage regulation?
A. 5% C. 60%
B. 50% D. 11.11%
11.11%
When the peak output voltage is 100V, the PIV for each diode in the full wave center tapped rectifier is:
A. 100V C. 141V
B. 200V D. 50V
100V
Find the dc voltage from a full wave rectifier with 120V peak rectified voltage.
A. 60V C. 76.39V
B. 7.64V D. 6.0V
76.39V
Find the band gap energy when a light of wavelength 1240 nm is incident on it.
A. 1 eV C. 1.3 eV
B. 2 eV D. 5 eV
1 eV
When the rms output voltage of a bridge full wave rectifier is 20V, the peak inverse voltage across the diodes, neglecting the diode drop, is:
A. 20 V C. 28.3 V
B. 40 V D. 56.6 V
28.3 V
A certain power supply filter produces an output with a ripple of 100 mV peak-to-peak and a dc value of 20 V. The ripple factor is:
A. 0.05 C. 0.00005
B. 0.005 D. 0.02
0.005
A 60 V peak full wave rectified voltage is applied to a capacitor-input filter. If f=120 Hz, RL=10 kΩ, and C=10 uF, the ripple voltage is:
A. 0.6 V C. 5.0 V
B. 6 mV D. 2.88 V
2.88 V
The average value of the input of a half wave rectified voltage with a peak value of 200 V is:
A. 63.7 V C. 141 V
B. 127.2 V D. 0 V
63.7 V
The average value of a full wave rectified voltage with a peak value of 75 V is:
A. 53 V C. 37.5 V
B. 47.8 V D. 23.9 V
47.8 V
A 10 Vp-p sinusoidal voltage is applied across a silicon diode and series resistor. The maximum voltage across the diode is:
A. 9.3 V C. 5 V
B. 0.7 V D. 4.3V
0.7 V
If the input voltage to a voltage tripler has an rms value of 12 V, the dc output voltage is approximately.
A. 36 V C. 33.9 V
B. 50.9 V D. 32.4 V
33.9 V