2-ELECTRONICS II MIDTERM

0.0(0)
Studied by 0 people
call kaiCall Kai
Locked
learnLearn
examPractice Test
spaced repetitionSpaced Repetition
heart puzzleMatch
flashcardsFlashcards
GameKnowt Play
Card Sorting

1/48

encourage image

There's no tags or description

Looks like no tags are added yet.

Last updated 7:45 AM on 9/17/26
Name
Mastery
Learn
Test
Matching
Spaced
Call with Kai
Chat

No analytics yet

Send a link to your students to track their progress

49 Terms

1
New cards

unijunction transistor

s a three-terminal semiconductor device characterized by a single PN junction. It is primarily used for switching and timing applications, functioning as an electrically controlled switch rather than an amplifier

2
New cards

double based diode

unijunction transistor is also called

3
New cards

emitter base 1 base 2

three terminal of ujt

4
New cards

negative resistance

The UJT exhibits unique properties such as _________, making it suitable for various electronic applications like oscillators and pulse generators.

5
New cards

heavily, lightly

(ujt) The emitter is ______ doped while the n-region is ________ doped. Thus, the resistance between base terminals is very high when emitter terminal is open.

6
New cards

off

(ujt) When the voltage VBB is applied with emitter open. A potential gradient is established along the n-type silicon bar. As the emitter is located close to the base B2, thus a major part of VBB appears between the emitter and base B1. The voltage V1 between emitter and B1, establishes a reverse bias on the PNjunction and the emitter current is cut off, but a small leakage current flows from B2 to emitter due to minority charge carriers. Thus, the device is said to be in _____ state.

7
New cards

off state

ujt emitter open

8
New cards

on

(ujt) When a positive voltage is applied at the emitter terminal, the pn-junction will remain reverse biased till the input voltage is less than V1. A soon as the input voltage at emitter exceeds V1, the pn-junction becomes forward biased. Under this condition, holes are supplied from p-type region into the n-type bar. These holes are repelled by positive B2 terminal and attracted towards the B1 terminal. This increase in the number of holes in the emitter to B1 region results in the decrease of resistance of this section of the bar. Because of this, the internal voltage drop from emitter to B1 region is reduced, thus the emitter current (IE) increases. As more holes are supplied, a condition of saturation is reached. At the point of saturation, the emitter current is limited by the emitter power supply. Now, the device is conducting, hence said to be in ______ state

9
New cards

on state

ujt with emitter at positive potential

10
New cards

conductivity modulation

The additional current reduces resistance in the base region, further enhancing current flow

11
New cards

negative resistance

As emitter current increases, it causes a decrease in voltage across B1, resulting in a regenerative effect that can lead to saturation

12
New cards

reverse bias

ujt with emitter open
pn juction:__________

13
New cards

high interbase resistance

ujt with emitter open

resistance:_________

14
New cards

emitter

ujt with emitter open

current flow: small leakage current from B2 to ______

15
New cards

b1

ujt with emitter open

Voltage: Most of the applied voltage (VBB) appears across ______

16
New cards

forward biased

UJT with Emitter at Positive Potential

pn junction: ________

17
New cards

conductivity modulation

UJT with Emitter at Positive Potential

Current flow: Increased emitter current (IE) due to _________

18
New cards

saturation

UJT with Emitter at Positive Potential

Regenerative effect: Can lead to _____

19
New cards

inter base resistance

(ujt) The resistance of silicon bar is called as the

20
New cards

4 to 10 k ohms

inter base resistance value

21
New cards

rb1

(ujt) is the resistance of the bar between emitter and B1 region. The value of this is variable and depends upon the bias voltage across the pn-junction

22
New cards

rb2

(ujt) is the resistance of the bar between emitter and B2 region.

23
New cards

rbb=rb1+rb2

With no voltage applied to the UJT, the value of inter-base resistance is given by:

24
New cards

n= V1/VBB

The intrinsic stand-off ration (ƞ) of UJT is given by:

25
New cards

intrinsic stand off ratio

Defined as 𝜼 = RB1 RBB , this ratio varies from 0.4 to 0.8 across different devices and influences how much voltage is required to trigger conduction.

26
New cards

field effect transistor

is a type of transistor that uses an electric field to control the flow of current in a semiconductor.

27
New cards

field effect transistor

voltage controlled transistor

28
New cards

source, drain, gate

3 terminals of FET

29
New cards

source

FET

Where current enters the transistor.

30
New cards

drain

FET

Where current exits the transistor.

31
New cards

gate

FET

The control terminal that modulates the conductivity of the channel between the source and drain.

32
New cards

junction fet jfet

type of FET that Utilizes a PN junction to control current flow. It can be either N-channel or P-channel.

33
New cards

metal oxide semiconductor fet mosfet

(FET) Features an insulating layer of oxide between the gate and the channel, allowing for high input impedance.

34
New cards

enhancement mode

mosfet type

Conducts when a positive gate voltage is applied.

A voltage applied to the gate creates a conducting channel in the semiconductor, enabling current flow

35
New cards

depletion mode

mosfet type

Conducts when no gate voltage is applied but can be turned off by applying a negative gate voltage

The conducting channel exists by default, which diminishes as a voltage is applied to the gate.

36
New cards

n channel jfet

The channel is formed by electrons. A positive gate-to-source voltage enhances the channel conductivity by attracting electrons to the channel region, allowing current to flow.


drain and source connected to n type

gate connected to p type

37
New cards

p channel jfet

The channel is formed by hole. A negative gateto-source voltage enhances the channel conductivity by attracting holes.


drain and source connected to p type

gate connected to n type

38
New cards

mosfet

features a metal gate insulated by a thin oxide layer from the semiconductor. It has two operating modes: enhancement mode and depletion mode.

39
New cards

light emitting diode

is a semiconductor device that emits light when an electric current passes through it.

40
New cards

light emitting diode

They are constructed from a p-n junction, which allows current to flow in one direction, leading to the emission of light as electrons recombine with holes.

41
New cards

photons

the energy in led is released in the form of

42
New cards

electroluminescence

is an optical phenomenon, and electrical phenomenon where a material emits light in response to an electric current passed through it.

43
New cards

aluminum alloys

to obtain red, orange and yellow light, in led

44
New cards

indium alloys

to get green, blue and white light in led

45
New cards

AlGaInP

elements to obtain red, orange and yellow light, in led

46
New cards

InGaN

elements Used for green, blue, and white LEDs.

47
New cards

liquid crystal display

is a flat display screen used in electronic devices such as laptop, computer, TV, cellphones and portable video games. As the name says liquid crystal is a material which flows like a liquid and shows some properties of solid.

48
New cards

nematic

In Liquid crystal display (LCD) __________ type of liquid crystal molecular arrangement is used in which molecules are oriented in some degree of alignment

49
New cards

liquid crystal display

Two glass plates with a thin layer of liquid crystal sandwiched between them.

• Top and bottom glass plates have polarizers oriented at right angles to each other.

• Electrodes are placed on the inner surfaces of the glass plates to apply a voltage to the liquid crystal.