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Flashcards testing knowledge on semiconductors, n-type and p-type material properties, PN junction operation, biasing conditions, and diode characteristics.
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Atoms consist of three basic particles: protons, electrons, and __________.
neutrons
Impurities added to a pure semiconductor to create an N-type material, such as phosphorus, arsenic, antimony, or bismuth, are called __________ impurities.
donor
P-type silicon is silicon doped with __________ gas that turns it into a conductive material that readily accepts electrons when voltage is applied.
boron
Extrinsic p-type semiconductors are created through doping with a group-__________ element.
III
Pentavalent impurity atoms have __________ valence electrons and produce n-type semiconductors by contributing extra electrons.
5
The gap between the valence band and the conduction band where no electron stays is called the __________ energy gap.
forbidden
The charge transfer of electrons and holes across the PN junction is known as __________.
diffusion
In forward biasing, the positive region of the device is connected to the __________-terminal of the supply.
p
Under forward voltage on the diode I-V characteristics curve, the barrier potential is approximately 0.3V for Germanium and __________ for Silicon.
0.7V
The steady state or DC operating point of a diode is also called the __________ point.
Quiescent
In reverse biasing, the depletion layer becomes __________ and resists current flow across the junction.
Thick
In the reverse-bias region, the diode exhibits transition capacitance (CT), while in the forward-bias region it exhibits __________ capacitance (CD).
diffusion
The formula for reverse recovery time is trr=ts+tt, where ts represents the __________ time.
storage
A Zener diode consists of a special, heavily doped p-n junction designed to conduct in the __________ direction when a specified voltage is reached.
reverse
The process of a light-emitting diode giving off light when energized by an electrical source is called __________.
electroluminescence