SEMICONDUCTORS, DIODE CHARACTERISTICS, AND APPLICATIONS

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62 Terms

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SEMICONDUCTORS

MATERIALS WITH ELECTRICAL PROPERTIES THAT LIE BETWEEN CONDUCTORS AND INSULATORS

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SILICON AND GERMANIUM

TWO OF THE MOST COMMONLY USED SEMICONDUCTIVE MATERIALS ARE ____

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VALENCE ELECTRON

PLAYS A CRUCIAL ROLE IN THE ABILITY TO CONDUCT ELECTRICITY UNDER CERTAIN CONDITION

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BOTH SILICON AND GERMANIUM ATOMS HAVE ___ VALENCE ELECTRON

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SILICON HAS ___ PROTONS IN ITS NUCLUES

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GERMANIUM HAS ___ PROTONS IN ITS NUCLUES

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CRYSTAL LATTICE

WHEN CERTAIN ATOMS COME TOGETHER TO FORM A SOLID MATERIAL, THEY ARRANGE THEMSELVES IN A FIXED, REPEATING PATTERN

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COVALENT BOND

FORMED WHEN ATOMS SHARE THEIR VALENCE ELECTRONS WITH NEIGHBORING ATOMS

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CHEMICAL STABILITY

ACHIEVED WHEN A SHARING OF ELECTRONS EFFECTIVELY GIVES EACH ATOM ACCESS TO EIGHT VALENCE ELECTRONS

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1.1eV

BANDGAP OF SILICON

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0.67eV

BANDGAP OF GERMANIUM

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HIGHER BANDGAP

ALLOWS SILICON DEVICES TO OPERATE AT HIGHER TEMPERATURES AND WITH LOWER LEAKAGE CURRENTS, MAKING THEM MORE SUITABLE FOR A WIDE RANGE OF APPLICATIONS, INCLUDING HIGH-POWER AND HIGH-TEMPERATURE ENVIRONMENT

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BETTER THERMAL STABILITY

SILICON’S HIGHER BANDGAP ALSO CONTRIBUTES TO ITS ____, WHICH MEANS THAT IT CAN WITHSTAND HIGHER TEMPERATURES WITHOUT SIGNIFICANT DEGRADATION IN PERFORMANCE THAT IS CRUCIAL FOR MANY ELECTRONIC APPLICATION

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LOWER INTRISIC CARRIER CONCENTRATION

MEANS LOWER LEAKAGE CURRENTS AT ROOM TEMPERATURE, WHICH IS IMPORTANT FOR MAINTAINING THE EFFICIENCY AND PERFORMANCE OF ELECTRONIC DEVICES

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RADIATION HARDNESS

PROPERTY OF SEMICONDUCTORS WHERE IT TENDS TO BE MORE RESISTANT TO RADIATION DAMAGE MAKING IT MORE SUITABLE FOR USE IN ENVIRONMENTS WHERE RADIATION EXPOSURE IS A CONCERN, SUCH AS IN SPACE APPLICATION

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DOPING

A PROCESS WHERE IMPURITIES ARE ADDED TO SEMICONDUCTORS TO ENHANCE THEIR CONDUCTIVITY

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NEGATIVE

N

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POSITIVE

P

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N-TYPE SEMICONDUCTORS ARE FORMED BY ADDING PENTAVALENT IMPURITIES WITH ___ VALENCE ELECTRONS

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P-TYPE SEMICONDUCTORS ARE FORMED BY ADDING TRIVALENT IMPURITIES WITH ___ VALENCE ELECTRONS

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PENTAVALENT IMPURITIES

IMPURITIES THAT DONATE AN EXTRA ELECTRON, INCREASING CONDUCTION-BAND ELECTRONS

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TRIVALENTIMPURITIES

IMPURITIES THAT CREATE HOLES IN THE CRYSTAL STRUCTURE, INCREASING HOLE CONCENTRATION

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ELECTRONS

MAJORITY CARRIERS OF N-TYPE SEMICONDUCTORS

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HOLES

MAJORITY CARRIERS OF P-TYPE SEMICONDUCTORS

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DOPING

ALLOWS PRECISE CONTROL OVER CONDUCTIVITY BY ADJUSTING THE NUMBER OF IMPURITY ATOMS, MAKING THESE MATERIALS FUNDAMENTAL TO ELECTRONICS

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DIODE

TWO-TERMINAL SEMICONDUCTOR DEVICE THAT ALLOWS CURRENT TO FLOW IN ONE DIRECTION WHILE BLOCKING IT IN THE OPPOSITE DIRECTION

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PN JUNCTION

WHERE P-TYPE SEMICONDUCTOR AND N-TYPE SEMICONDUCTOR ARE JOINED TOGETHER

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BIAS

REFERS TO THE USE OF A DC VOLTAGE TO ESTABLISH SPECIFIC OPERATING CONDITIONS FOR AN ELECTRONIC DEVICE

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DEPLETION REGION

A REGION DEVOID OF FREE CHARGE CARRIERS WHERE ELECTRONS FROM THE N-TYPE REGION DIFFUSE INTO THE P-TYPE REGION AND RECOMBINE WITH HOLES

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BUILT-IN ELECTRIC FIELD

ESTABLISHES A POTENTIAL BARRIER WHICH OPPOSES FURTHER MOVEMENT OF ELECTRONS AND HOLES

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0.7V

SILICON’S BUILT-IN ELECTRIC FIELD

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FORWARD BIAS

WHEN A POSITIVE VOLTAGE IS APPLIED TO THE P-SIDE AND NEGATIVE TO THE N-SIDE, THE POTENTIAL BARRIER IS REDUCED, ALLOWING CURRENT TO FLOW

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REVERSE BIAS

WHEN THE VOLTAGE IS REVERSED, THE DEPLETION REGION WIDENS, BLOCKING CURRENT FLOW

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BARRIER POTENTIAL

THE BUILDUP OF POSITIVE AND NEGATIVE IONS CREATES AN ELECTRIC FIELD THAT PREVENTS MORE ELECTRONS FROM CROSSING THE JUNCTION WHICH CREATES ___

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0.3V

POTENTIAL BARRIER FOR GERMANIUM

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FORWARD BIAS

CONDITION THAT ALLOWS CURRENT TO FLOW THROUGH A DIODE

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REVERSE BIAS

CONDITION THAT PREVENTS CURRENT FLOW THROUGH THE DIODE

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50V

BREAKDOWN VOLTAGE IS TYPICALLY GREATER THAN ___ FOR MOST RECTIFIER DIODES

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RECTIFIERS

CONVERT AC VOLTAGE INTO DC VOLTAGE

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RECTIFIERS

ESSENTIAL COMPONENTS IN ALL DC POWER SUPPLIES THAT OPERATE FROM AN AC VOLTAGE SOURCE

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HALF-WAVE RECTIFIER

WHEN A DIODE IS CONNECTED TO AN AC SOURCE WHICH PROVIDES THE INPUT VOLTAGE AND LOAD TO A RESISTOR

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PULSATING DC VOLTAGE

HAS A SIGNIFICANT RIPPLE, MAKING IT LESS SMOOTH COMPARED TO THE OUTPUT OF A FULL-WAVE RECTIFIER

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DC VOLTMETER

THE AVERAGE VALUE OF A HALF-WAVE RECTIFIED OUTPUT VOLATGE IS THE VALUE YOU WOULD MEASURE ON A ____

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FULL-WAVE RECTIFIER

CIRCUIT THAT CONVERTS AN ENTIRE AC WAVEFORM INTO A PULSATING DC VOLTAGE

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CENTER-TAP FULL-WAVE RECTIFIER

TYPE OF FULL-WAVE RECTIFIER THAT IS BULKIER BUT EFFICIENT

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BRIDGE RECTIFIER

TYPE OF FULL-WAVE RECTIFIER THAT IS MORE EFFICIENT AND WIDELY USED DUE TO ITS SIMPLER TRANSFORMER REQUIREMENT

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CENTER-TAP FULL-WAVE RECTIFIER

TYPE OF RECTIFIER CIRCUIT THAT USES A CENTER-TAPPED TRANSFORMER AND TWO DIODES TO CONVERT AN ALTERNATING CURRENT INPUT INTO A PULSATING DIRECT CURRENT OUTPUT

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TURNS RATIO

DETERMINES THE OUTUT VOLTAGE OF A FULL-WAVE RECTIFIER

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PEAK INVERSE VOLTAGE

PIV

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FULL-WAVE BRIDGE RECTIFIER

WIDELY USED CIRCUIT FOR CONVERTING AC TO DC

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TRANSFORMER THEORY

THEORY WHERE THE SECONDARY VOLTAGE IS RELATED TO THE PRIMARY VOLTAGE BY THE TURNS RATIO OF THE TRANSFORMER

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DC POWER SUPPLY

CIRCUIT THAT CONVERTS THE STANDARD 120V, 60Hz AC VOLTAGE AVAILABLE AT WALL OUTLETS INTO A CONSTANT DC VOLTAGE

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RECTIFIER

HEART OF THE DC POWER SUPPLY

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BLOCK DIAGRAMS

USED TO ILLUSTRATE THE BASIC OPERATION OF RECTIFIERS AND A REGULATED DC POWER SUPPLY

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RECTIFIER

CONVERTS THE AC INPUT VOLTAGE INTO A PULSATING DC VOLTAGE

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CAPACITOR FILTER

USED TO ELIMINATE THE FLUCTUATIONS IN THE REACTIFIED VOLTAGE

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REGULATOR

CIRCUIT DESIGNED TO MAINTAIN A CONSTANT DC OUTPUT VOLTAGE, EVEN WHEN THERE ARE VARIATIONS IN THE INPUT LINE VOLTAGE OR CHANGES IN THE LOAD

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LOAD

REPRESENTS THE CIRCUIT OR DEVICE THAT THE POWER SUPPLY IS DESIGNED TO POWER

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RIPPLE VOLTAGE

FLUCTUATION IN OUTPUT VOLTAGE CAUSED BY THIS CHARGING AND DISCHARGING PROCESS

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IC VOLTAGE REGULATOR

MINIMIZE RIPPLE AND MAINTAIN A STABLE OUTPUT VOLTAGE DESPITE INPUT FLUCTUATIONS

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EXTERNAL CAPACITORS

USED FOR FILTERING, PREVENTING OSCILLATION, AND IMPROVING TRANSIENT RESPONSE, ENSURING RELIABLE POWER SUPPLY PERFORMANCE

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LM317

ONE OF THE MOST POPULAR ADJUSTABLE REGULATORS