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SEMICONDUCTORS
MATERIALS WITH ELECTRICAL PROPERTIES THAT LIE BETWEEN CONDUCTORS AND INSULATORS
SILICON AND GERMANIUM
TWO OF THE MOST COMMONLY USED SEMICONDUCTIVE MATERIALS ARE ____
VALENCE ELECTRON
PLAYS A CRUCIAL ROLE IN THE ABILITY TO CONDUCT ELECTRICITY UNDER CERTAIN CONDITION
4
BOTH SILICON AND GERMANIUM ATOMS HAVE ___ VALENCE ELECTRON
14
SILICON HAS ___ PROTONS IN ITS NUCLUES
32
GERMANIUM HAS ___ PROTONS IN ITS NUCLUES
CRYSTAL LATTICE
WHEN CERTAIN ATOMS COME TOGETHER TO FORM A SOLID MATERIAL, THEY ARRANGE THEMSELVES IN A FIXED, REPEATING PATTERN
COVALENT BOND
FORMED WHEN ATOMS SHARE THEIR VALENCE ELECTRONS WITH NEIGHBORING ATOMS
CHEMICAL STABILITY
ACHIEVED WHEN A SHARING OF ELECTRONS EFFECTIVELY GIVES EACH ATOM ACCESS TO EIGHT VALENCE ELECTRONS
1.1eV
BANDGAP OF SILICON
0.67eV
BANDGAP OF GERMANIUM
HIGHER BANDGAP
ALLOWS SILICON DEVICES TO OPERATE AT HIGHER TEMPERATURES AND WITH LOWER LEAKAGE CURRENTS, MAKING THEM MORE SUITABLE FOR A WIDE RANGE OF APPLICATIONS, INCLUDING HIGH-POWER AND HIGH-TEMPERATURE ENVIRONMENT
BETTER THERMAL STABILITY
SILICON’S HIGHER BANDGAP ALSO CONTRIBUTES TO ITS ____, WHICH MEANS THAT IT CAN WITHSTAND HIGHER TEMPERATURES WITHOUT SIGNIFICANT DEGRADATION IN PERFORMANCE THAT IS CRUCIAL FOR MANY ELECTRONIC APPLICATION
LOWER INTRISIC CARRIER CONCENTRATION
MEANS LOWER LEAKAGE CURRENTS AT ROOM TEMPERATURE, WHICH IS IMPORTANT FOR MAINTAINING THE EFFICIENCY AND PERFORMANCE OF ELECTRONIC DEVICES
RADIATION HARDNESS
PROPERTY OF SEMICONDUCTORS WHERE IT TENDS TO BE MORE RESISTANT TO RADIATION DAMAGE MAKING IT MORE SUITABLE FOR USE IN ENVIRONMENTS WHERE RADIATION EXPOSURE IS A CONCERN, SUCH AS IN SPACE APPLICATION
DOPING
A PROCESS WHERE IMPURITIES ARE ADDED TO SEMICONDUCTORS TO ENHANCE THEIR CONDUCTIVITY
NEGATIVE
N
POSITIVE
P
5
N-TYPE SEMICONDUCTORS ARE FORMED BY ADDING PENTAVALENT IMPURITIES WITH ___ VALENCE ELECTRONS
3
P-TYPE SEMICONDUCTORS ARE FORMED BY ADDING TRIVALENT IMPURITIES WITH ___ VALENCE ELECTRONS
PENTAVALENT IMPURITIES
IMPURITIES THAT DONATE AN EXTRA ELECTRON, INCREASING CONDUCTION-BAND ELECTRONS
TRIVALENTIMPURITIES
IMPURITIES THAT CREATE HOLES IN THE CRYSTAL STRUCTURE, INCREASING HOLE CONCENTRATION
ELECTRONS
MAJORITY CARRIERS OF N-TYPE SEMICONDUCTORS
HOLES
MAJORITY CARRIERS OF P-TYPE SEMICONDUCTORS
DOPING
ALLOWS PRECISE CONTROL OVER CONDUCTIVITY BY ADJUSTING THE NUMBER OF IMPURITY ATOMS, MAKING THESE MATERIALS FUNDAMENTAL TO ELECTRONICS
DIODE
TWO-TERMINAL SEMICONDUCTOR DEVICE THAT ALLOWS CURRENT TO FLOW IN ONE DIRECTION WHILE BLOCKING IT IN THE OPPOSITE DIRECTION
PN JUNCTION
WHERE P-TYPE SEMICONDUCTOR AND N-TYPE SEMICONDUCTOR ARE JOINED TOGETHER
BIAS
REFERS TO THE USE OF A DC VOLTAGE TO ESTABLISH SPECIFIC OPERATING CONDITIONS FOR AN ELECTRONIC DEVICE
DEPLETION REGION
A REGION DEVOID OF FREE CHARGE CARRIERS WHERE ELECTRONS FROM THE N-TYPE REGION DIFFUSE INTO THE P-TYPE REGION AND RECOMBINE WITH HOLES
BUILT-IN ELECTRIC FIELD
ESTABLISHES A POTENTIAL BARRIER WHICH OPPOSES FURTHER MOVEMENT OF ELECTRONS AND HOLES
0.7V
SILICON’S BUILT-IN ELECTRIC FIELD
FORWARD BIAS
WHEN A POSITIVE VOLTAGE IS APPLIED TO THE P-SIDE AND NEGATIVE TO THE N-SIDE, THE POTENTIAL BARRIER IS REDUCED, ALLOWING CURRENT TO FLOW
REVERSE BIAS
WHEN THE VOLTAGE IS REVERSED, THE DEPLETION REGION WIDENS, BLOCKING CURRENT FLOW
BARRIER POTENTIAL
THE BUILDUP OF POSITIVE AND NEGATIVE IONS CREATES AN ELECTRIC FIELD THAT PREVENTS MORE ELECTRONS FROM CROSSING THE JUNCTION WHICH CREATES ___
0.3V
POTENTIAL BARRIER FOR GERMANIUM
FORWARD BIAS
CONDITION THAT ALLOWS CURRENT TO FLOW THROUGH A DIODE
REVERSE BIAS
CONDITION THAT PREVENTS CURRENT FLOW THROUGH THE DIODE
50V
BREAKDOWN VOLTAGE IS TYPICALLY GREATER THAN ___ FOR MOST RECTIFIER DIODES
RECTIFIERS
CONVERT AC VOLTAGE INTO DC VOLTAGE
RECTIFIERS
ESSENTIAL COMPONENTS IN ALL DC POWER SUPPLIES THAT OPERATE FROM AN AC VOLTAGE SOURCE
HALF-WAVE RECTIFIER
WHEN A DIODE IS CONNECTED TO AN AC SOURCE WHICH PROVIDES THE INPUT VOLTAGE AND LOAD TO A RESISTOR
PULSATING DC VOLTAGE
HAS A SIGNIFICANT RIPPLE, MAKING IT LESS SMOOTH COMPARED TO THE OUTPUT OF A FULL-WAVE RECTIFIER
DC VOLTMETER
THE AVERAGE VALUE OF A HALF-WAVE RECTIFIED OUTPUT VOLATGE IS THE VALUE YOU WOULD MEASURE ON A ____
FULL-WAVE RECTIFIER
CIRCUIT THAT CONVERTS AN ENTIRE AC WAVEFORM INTO A PULSATING DC VOLTAGE
CENTER-TAP FULL-WAVE RECTIFIER
TYPE OF FULL-WAVE RECTIFIER THAT IS BULKIER BUT EFFICIENT
BRIDGE RECTIFIER
TYPE OF FULL-WAVE RECTIFIER THAT IS MORE EFFICIENT AND WIDELY USED DUE TO ITS SIMPLER TRANSFORMER REQUIREMENT
CENTER-TAP FULL-WAVE RECTIFIER
TYPE OF RECTIFIER CIRCUIT THAT USES A CENTER-TAPPED TRANSFORMER AND TWO DIODES TO CONVERT AN ALTERNATING CURRENT INPUT INTO A PULSATING DIRECT CURRENT OUTPUT
TURNS RATIO
DETERMINES THE OUTUT VOLTAGE OF A FULL-WAVE RECTIFIER
PEAK INVERSE VOLTAGE
PIV
FULL-WAVE BRIDGE RECTIFIER
WIDELY USED CIRCUIT FOR CONVERTING AC TO DC
TRANSFORMER THEORY
THEORY WHERE THE SECONDARY VOLTAGE IS RELATED TO THE PRIMARY VOLTAGE BY THE TURNS RATIO OF THE TRANSFORMER
DC POWER SUPPLY
CIRCUIT THAT CONVERTS THE STANDARD 120V, 60Hz AC VOLTAGE AVAILABLE AT WALL OUTLETS INTO A CONSTANT DC VOLTAGE
RECTIFIER
HEART OF THE DC POWER SUPPLY
BLOCK DIAGRAMS
USED TO ILLUSTRATE THE BASIC OPERATION OF RECTIFIERS AND A REGULATED DC POWER SUPPLY
RECTIFIER
CONVERTS THE AC INPUT VOLTAGE INTO A PULSATING DC VOLTAGE
CAPACITOR FILTER
USED TO ELIMINATE THE FLUCTUATIONS IN THE REACTIFIED VOLTAGE
REGULATOR
CIRCUIT DESIGNED TO MAINTAIN A CONSTANT DC OUTPUT VOLTAGE, EVEN WHEN THERE ARE VARIATIONS IN THE INPUT LINE VOLTAGE OR CHANGES IN THE LOAD
LOAD
REPRESENTS THE CIRCUIT OR DEVICE THAT THE POWER SUPPLY IS DESIGNED TO POWER
RIPPLE VOLTAGE
FLUCTUATION IN OUTPUT VOLTAGE CAUSED BY THIS CHARGING AND DISCHARGING PROCESS
IC VOLTAGE REGULATOR
MINIMIZE RIPPLE AND MAINTAIN A STABLE OUTPUT VOLTAGE DESPITE INPUT FLUCTUATIONS
EXTERNAL CAPACITORS
USED FOR FILTERING, PREVENTING OSCILLATION, AND IMPROVING TRANSIENT RESPONSE, ENSURING RELIABLE POWER SUPPLY PERFORMANCE
LM317
ONE OF THE MOST POPULAR ADJUSTABLE REGULATORS