1/25
Comprehensive vocabulary flashcards covering field effect transistors (JFET, DE-MOSFET, E-MOSFET, CMOS), small-signal models, amplifier frequency responses, feedback topologies, and oscillator circuits.
Field Effect Transistor (FET)
A voltage-controlled, unipolar semiconductor device in which current conduction is carried out exclusively by majority charge carriers through a conduction channel controlled by an electric field without direct contact between controlling and controlled quantities.
Shockley's Equation
The mathematical relationship describing the parabolic transfer characteristics of a JFET or depletion-type MOSFET, expressed as ID=IDSS(1−VpVGS)2, where IDSS is the maximum drain saturation current and Vp is the pinch-off voltage.
Depletion-Type MOSFET (DE-MOSFET)
A field effect transistor constructed with a pre-existing physical channel between the source and drain, capable of operating in both depletion mode (when negative VGS reduces channel carriers) and enhancement mode (when positive VGS attracts additional electrons to increase conductivity).
Enhancement-Type MOSFET (E-MOSFET)
A field effect transistor fabricated without a pre-existing channel between the heavily doped regions, requiring an applied gate voltage greater than the threshold voltage (VGS>VT) to induce an inversion layer and allow drain current to flow according to ID=k(VGS−VT)2.
Threshold Voltage (VT)
The minimum gate-to-source voltage level required to induce a conductive inversion channel beneath the SiO2 insulating layer, causing drain current in an enhancement-type MOSFET to rise from zero to a significant value.
CMOS Inverter
A complementary logic circuit consisting of a p-channel enhancement MOSFET (connected to VSS) and an n-channel enhancement MOSFET (connected to ground) whose gates share the input and whose drains share the output, ensuring one transistor is off while the other is on.
Transconductance (gm)
The control factor of a FET representing the slope of the transfer characteristic curve at a given Q-point, defined mathematically as the derivative of drain current with respect to gate-to-source voltage: gm=dVGSdIDQ-point=ΔVGSΔID.
Zero-Bias Transconductance (gm0)
The maximum transconductance of a JFET occurring when the gate-to-source voltage VGS=0V, calculated using the formula gm0=∣Vp∣2IDSS.
Small-Signal Drain Resistance (rd)
The dynamic output impedance of a FET amplifier, defined as the reciprocal of the slope of the drain characteristic curve in the saturation region: rd=ΔIDΔVDSVGS=constant=yos1.
Source Follower (Common Drain Configuration)
A JFET amplifier configuration where the output is taken from the source terminal with the drain placed at AC ground; it exhibits high input impedance (Zi=RG), low output impedance (Zo≈RS∥gm1), and an in-phase voltage gain slightly less than unity (Av<1).
Miller Input Capacitance (CMi)
The effective capacitance appearing across the input terminals of an inverting amplifier due to feedback capacitance Cf between input and output, defined as CMi=(1−Av)Cf, which significantly lowers the high-frequency cutoff.
Negative Feedback
The circuit configuration in which a fraction of the output signal is fed back out of phase (180∘) to subtract from the applied input signal (Xi=Xs−Xf), reducing closed-loop gain (Af=1+βAA) while enhancing gain stability and reducing distortion.
Loop Gain
The factor by which a signal is multiplied as it completes one complete transmission around the feedback loop, equal to −βA for negative feedback and +βA for positive feedback.
Voltage Series Feedback
A feedback topology where output voltage is sampled in parallel and the feedback voltage signal is connected in series with the input voltage source, resulting in increased input impedance (Zif=Zi(1+βA)) and decreased output impedance (Zof=1+βAZo).
Current Series Feedback
A feedback topology where output load current is sampled in series and the feedback signal is mixed in series with the input signal, resulting in an increase of both input impedance (Zif=Zi(1+βA)) and output impedance (Zof=Zo(1+βA)).
Barkhausen Criterion
The two mandatory conditions required for an amplifier circuit to maintain sustained sinusoidal oscillations without an external input: the magnitude of the loop gain must equal unity (∣Aβ∣=1), and the net phase shift around the feedback loop must be 0∘, 360∘, or an integer multiple of 2π.
RC Phase Shift Oscillator
An audio-frequency oscillator comprising an inverting op-amp providing a 180∘ phase shift cascaded with a three-stage RC ladder feedback network (each stage providing 60∘, totaling 180∘), oscillating at a frequency of fo=2πRC61.
Wien Bridge Oscillator
An oscillator employing a non-inverting amplifier and an RC lead-lag bridge network that provides zero phase shift at its resonant frequency, with frequency of oscillation given by fo=2πR1R2C1C21 and requiring an amplifier gain of A≥3 to sustain oscillations.
Hartley Oscillator
An LC radio-frequency oscillator whose frequency-selective feedback tank network consists of two tapped inductors (L1 and L2) and a single parallel capacitor (C), producing a resonant frequency of fo=2π(L1+L2)C1.
Colpitts Oscillator
An LC radio-frequency oscillator that utilizes a tank circuit consisting of an inductor (L) and a split capacitive voltage divider (C1 and C2), with an oscillation frequency defined by fo=2πL(C1+C2C1C2)1.
Clapp Oscillator
A modified Colpitts oscillator that incorporates an additional small capacitor C3 in series with the tank inductor L, making the oscillation frequency fo≈2πLC31 independent of the transistor internal capacitances (Cin and Cout).
Crystal Oscillator
A highly stable tuned oscillator in which a piezoelectric quartz crystal replaces the inductor in an LC tank circuit, exploiting electromechanical resonance to eliminate drift caused by temperature and aging.
Series-Fed Class A Power Amplifier
A power amplifier configuration where the active device conducts for the full 360∘ of the input cycle, possessing a maximum theoretical conversion efficiency of 25% in direct series-fed form and 50% when transformer-coupled.
Class B Push-Pull Amplifier
An amplifier topology utilizing two complementary active devices that conduct alternately for exactly 180∘ (half-cycle) each, achieving a theoretical maximum power conversion efficiency of 78.5%.
Crossover Distortion
Non-linear distortion occurring in complementary class B push-pull amplifiers during the zero-crossing transition of the input signal when both transistors remain momentarily turned off due to their base-emitter cut-in voltages.

Voltage Shunt Feedback FET Circuit
A field effect transistor amplifier configuration where a feedback resistor RF connects the drain output back to the gate input, sampling output voltage and feeding back current in parallel with the source resistance to stabilize gain.