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Define mean drift velocity
The average velocity of charge carriers along a conductor
Taking into account their random thermal motion and collisions
State the equation relating current to number density, cross-sectional area, drift velocity and charge.
I = nAve
Explain why n is much smaller in semiconductors than in metals.
In semiconductors, only a small fraction of electrons are free to move
Most electrons are bound in covalent bonds; only those excited across the band gap are free
Define I = nAve
current = number density cross-sectional area mean drift velocity * elementary charge
A copper wire of diameter 0.80 mm carries a current of 2.5 A. Calculate the mean drift velocity of the electrons. n = 8.5 × 1028 m−3, e = 1.60 × 10−19 C.
A = πr² = π × (0.40 × 10−3)² = 5.03 × 10−7 m²
v = I / (n A e) = 2.5 / (8.5 × 1028 × 5.03 × 10−7 × 1.60 × 10−19)
v = 3.7 × 10−4 m s−1
A silicon semiconductor has n = 1.5 × 1016 m−3. When the drift velocity is 80 m s−1, the current is 1.9 × 10−7 A. Calculate the cross-sectional area of the semiconductor. e = 1.60 × 10−19 C. [2 marks]
A = I / (n v e) = 1.9 × 10−7 / (1.5 × 1016 × 80 × 1.60 × 10−19)
A = 9.9 × 10−7 m² (about 1 mm²)
Explain, in terms of n, why metals are much better conductors than semiconductors at room temperature. [2 marks]
Metals have n ~ 1028 m−3 whereas semiconductors have n ~ 1016 m−3
Metals have many more free charge carriers per unit volume, so can carry much larger currents for the same v and A