Electronic Devices Lectures

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Last updated 6:41 PM on 6/12/24
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81 Terms

1
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how does f(E) depend on temperature?

it gradually increases as temperature increases.

2
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what is the occupancy of a state at E = Ef?

50%

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what is the fermi energy of fermi level Ef?

the eneryg where seeing an electron is 50%

4
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how does density of states g(E) depend on energy E?

Regardless of E, g(E) stays the same. no dependancy

5
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which groups form semiconductors?

II, III, IV, V, VI. ie (1-6_

6
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miller index direction syntax

[]

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miller index surface syntax

()

8
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wafer thickness or chip size

mils (10e-3 inches = 25.4 micrometers)

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ni of silicon

1×10^10 / cm³

10
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crystalline silicon band electrons

not tied to or associated with any one particular atom

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forbidden zone

a crystal containing only Si atoms with no impurities gives rise to the conduction and valence bands with no levels in the band gap

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what are the n values for shell k, shell L, shell m, shell n,

1 , 2, 3, 4

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Ideal Component

A component that takes no space, weighs nothing, uses no power, costs nothing, requires no maintenance, no training to operate, and lasts forever.

“Smart weightless power costs more training but lasts forever.”

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Conductivity Equation

Describes the relationship between resistance, current, electron charge, number of free electrons, and holes in a semiconductor.

o   Q = 1.602 * 10-19  (c) =  Electron charge

o   N – number of free electrons (e-)

o   P – number of free holes (h+)

o   Mn -  how fast the e- is moving

o   Mp – how fast the h+ is moving

<p>Describes the relationship between resistance, current, electron charge, number of free electrons, and holes in a semiconductor.</p><p>o&nbsp;&nbsp; Q = 1.602 * 10<sup>-19 </sup>&nbsp;(c) =&nbsp; Electron charge</p><p>o&nbsp;&nbsp; N – number of free electrons (e-)</p><p>o&nbsp;&nbsp; P – number of free holes (h+)</p><p>o&nbsp;&nbsp; Mn -&nbsp; how fast the e- is moving</p><p>o&nbsp;&nbsp; Mp – how fast the h+ is moving</p>
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Semiconductor Types

Classification into elemental and compound semiconductors, focusing on Si, Ge, Ga, As, and their applications.

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Crystal Growth

The process of making semiconductors, including crystal structure, wafer slicing, and different lattice types.

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Energy Levels, Bonds, and Bands

Concepts related to electronic atom structure, energy bands, covalent bonds, and carriers in semiconductors.

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Fermi Function f(E)

Gives the probability of a state being occupied by an electron, influencing the behavior of electrons in a semiconductor crystal.

19
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Density of States g(E)

The number of available states for electrons in a semiconductor, crucial for understanding electron occupancy and behavior.

20
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an si atom has how many electrons

14

21
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how many atoms are there in the three dimensional diamond lattice unit cell?

8

22
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Bell Labs (1947)

the 1st transistor was made.

o   John Bardeen

o   Walter Brattain

o   William Shockley

23
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device dimensions

o   Microns (micrometers) – 10-6

24
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·Oxide thickness

o   Angdstroms (A) or nanometers (nm) – 10-9

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wafer diameters

o   Millimeters(mm) or inches

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conductivity is determined by the number of __ and __.

electrons and holes

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resistivity is the inverse of _______

conductivity

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Elemental

using one material

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Compound

uses more than one material

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semiconductor - group IV

silicon is the most common

in most integrated circuits and power devices

31
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semiconductor- group III and V

GeAs is most common

light emitting - GaN, GaAsP

optical communication - GaLnAsp

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semiconductor - group II and VI

lightning arresters - ZnO

Infrared detectors - HgCdTe

33
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how to make a semiconductor

o   Bring single crystal seed into the melt

o   Dip seed into melt and withdraw slowly

o   Pull seed with proper pull rate and rotation

34
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for slicing wafers, what is used?

a wire coated in diamond splinters

35
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1 cpu = _____ mm²

506

36
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Crystals structure - amorphous

§  Randomly distributed, working like an insulator (glass)

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Crystals structure - Polycrystalline

Metal, some organization, working like an conductor (most metals)

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Crystals structure - single crystal

very organized - semi-conductor - (silicone wafer)

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simple cubic lattice

atoms on every corner totaling 1 atom

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body centered cubic (bcc)

atoms on every corner AND 1 in the middle totaling 2 atoms

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face centered (fcc)

atoms on every corner AND 1 atom on the surface of each face of the cube totaling 4 atoms.

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diamond lattice

fcc with 4 additional atoms in the box totaling 8 atoms.

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unit cell

small portion of any crystal that could be used to reproduce the crystal

doesnt have to be primitive, the smallest unit cell possible

44
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miller indices

numbers that specify the wafer surfaces

find x, y and z

inverse them

normalize the lowest integers

45
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zincblende structure

same as a diamond lattice EXCEPT there are two different types of atoms in the lattice

GaAs, InP, GaP,

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miller indices cannot be established for a plane passing through the ____.

orgin

47
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isolated atom

an atomic core or nucleus surrounded by electrons

48
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principle quantum numbers (n)

determines the energy of an election

49
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Azimuthal quantum number (l)

determines the angular momentum magnitude.

each value of l constitutes a subshell

50
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conduction band (Ec)

higher band, can hold 8 electrons

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band gap (Eg)

amount of energy gained or lost by the charge of a single electron moved across an electric potential different of 1 volt

electrons cannot exist in this gap

determines the characteristics of the device (ie. metal, semiconductor, insulator)

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what is the band gap (Eg) of silicone?

1.12 eV

53
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lower band gap energy = lower _________ = higher ______________

resistance, conductivity

54
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at low temperatures, there are no electrons in the ____________ band and no holes in the ____________ band. aka..there is no current.

conduction, valence

55
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free electrons

only in the conduction band

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free holes

only in the valence band

57
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current equation

i = dQ/Dt

Q = charge = free electrons and free holes

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electron hole pair (EHP)

for every free hole there is a free electron

59
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dopant atoms

specific impurities added to semiconductors

60
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donor atom

group V atoms (P, As, Sb)

Extra electron

At higher temps, donor donates extra electron

n - type (electrons are majority carrier)

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Acceptor atom

group III atoms (B, Ga, In)

missing an electron

at higher temps, acceptor takes an electron

P-type

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intrinsic semiconductor

undoped semiconductor sample containing any significant amount of impurity atom

number of electrons (n) = number of holes(i) = ni

ni for si = 1×10^10 cm³

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extrinsic semicondcutor

doped semiconductor

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majority carrier

the most abundant carrier in a given semiconductor sample

electrons in an n-type material

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minority carrier

the least abundant carrier in a given semiconductor sample

holes in an n-type material

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density of states

number of chairs available for electrons

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effective mass (Mn*)

mass of electrons in a crystal. different from the mass of electrons in the free space

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fermi function f(E)

gives the probability of a state being occupied by an election

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fermi energy Ef

where the probability of seeing an electron is 50%. going up decreased the probability but going down increases the probability

70
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boltzmann constant (k)

8.617 × 10^(-5)

71
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electron density

depends on the area under the (E - Ec) vs gc(e) curve

<p>depends on the area under the (E - Ec) vs gc(e) curve</p>
72
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what material parameters determine the semiconductor resistivity?

carrier density (electron and hole) and mobility

73
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which one material parameter influence the semiconductor resistivity the most?

dopant density

74
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what shell do si atoms have 4 electrons in?

M shell

75
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charge of electron

1.6 × 10^-19 C

76
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how many atoms are there in the (100) plane?

2

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81
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