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T/F: Copper can directly contact silicon without any additional materials in modern processes
False
T/F:Diffusion runners are preferred for long wires because they have low resistance
False
T/F: In modern processes, the aspect ratio (AR = t/w) of wires is typically much less than 1
False
T/F: Using repeaters always reduces both delay and energy consumption
False
Which parameter defines wire pitch?
w + s
Total wire capacitance is composed of:
Top + Bottom + 2×Adjacent capacitance
Which is NOT a common method to reduce crosstalk?
Shield wires
Increase spacing
Decrease spacing
Ensure neighbors switch at different times
Decreasing Spacing
What is the key difference between volatile and non-volatile memory?
Volatile memory loses data without power
Which of the following is volatile memory?
DRAM
ROM
SRAM
SSD
DRAM and SRAM
Which memory type can’t be written to multiple times?
ROM
What does EEPROM use to store data?
Floating-gate transistors
Which of the following about SRAM is correct?
Memory unit layout size is small compared to other memories
There is a precharge before reading process
It needs constant refreshing
Data will be lost after reading operation
All of the above
(T/F) One bit SRAM has 4 transistors
False
(T/F) To read from an SRAM, both bitline and bitline bar need to be precharged before turning on wordline
True
(T/F) During the reading process, one of bitline and bitline bar will stay high and the other will go low
True
(T/F) To write to an SRAM, you only need to write the data in from bitline or bitline bar side
False
(T/F) SRAM is widely used for on-chip memory because it’s fast and also small in area
False
(T/F) SRAM can be scaled down easily into the most advanced technology node because it’s a ratioed circuit
False
To ensure SRAM write operation success
Access transistor needs to be larger than pull up transistor
To ensure read success of SRAM
Pull down transistor needs to be larger than access transistor
(T/F)More SRAM cells connected to bitline and bitline bar means shorter reading time
False
(T/F)For an 8 column, 32 row SRAM array, you need 32 precharge circuits
False
(T/F) SRAM row decoder is necessary, but column decoder/mux is optional depending whether one bit or one row data is accessed during reading process
True
(T/F) It’s always a good practice to keep the write driver transistors as small as possible due to power and area concerns
False
(T/F)Reading sensing amplifier is a differential amplifier and should be enabled and turned on when either read enable or write enable signal is asserted.
False
(T/F)Testing normally costs less compared to chip design and fabrication.
False
(T/F)Most chip failures after fabrication are due to logic bugs rather than electrical failures.
True
(T/F)The stuck-at fault model assumes nodes can be stuck at either logic 0 or logic 1.
True
(T/F)Good observability and controllability increase the number of test vectors required.
False
Which of the following is NOT part of the testing process discussed?
Manufacturing test
Logic verification
Compiler optimization
Silicon debug
Compiler Optimization
What is the main purpose of Shmoo plots?
Diagnose failures by varying voltage and frequency
Which of the following best describes observability?
Ability to measure internal nodes from output pins