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Band
many closely spaced molecular orbitals of nearly continuous energu
valence band
HOMO
conduction band
LUMO
insulator
large energy gap between valence and conduction band
energy (band) gap
energy difference between the top of valence band and bottom of conduction band where no electronic states exist
conductor
partly filled conduction and valence bands
increasing temp on conductor effect
makes the conductor worse
semiconductors
full valence band, empty conductance band, close together
- a few electrons can jump into the vacant conduction band
at low temp, semiconductors are good __________
insulators (not as good as an insulator)
at high temp, semiconductors are good __________
conductors (not as good as a conductor)
doped semiconductors
adding small amounts of impurity atoms to an intrinsic (pure) semiconductor to control its electrical conductivity.
intrinsic semiconductor
pure semiconductor form
EF: about in the middle of gap
n-type semiconductor
" more negative"
- dopant has more electrons
- better conductor
EF: raised above new band
p-type semiconductor
"more positive"
- dopant has less electrons
- better insulator
EF: lowered below new band
fermi level (EF)
energy at which electron is equally likely to be in either band
photovoltaic cells
p-n junction with energy gap = hv of a light source
LED (light emitting diode)
p-n junction with forward bias
chelate ligand
ligand with more than 1 point for electron donation
bidente (en)
molecule that has 2 nitrogen atoms causing 2 points for electron donationg
high spin decimal
.6
low spin decimal
-.4
overall ka formula
product of individual ka’sma
magnetic moment formula (μs)
(n(n+2))^1/2
n=unpaired electron
strong field ligands are
low spin
weak field ligands are
high spin
what rows of the transitional metals are always low spin
2nd and 3rd
what ligands are low spin
CN and CO
what ligands are high spin
halogens