M1P1 (BJT DC ANALYSIS P1)

Active

BJT mode with the B-E junction forward biased and B-C junction reverse biased is the __ mode.

Cut-off

BJT mode with both the B-E and B-C junctions reverse biased is the __ mode.

Saturation

BJT mode with both the B-E and B-C junctions forward biased is the __ mode.

OFF switch

In switching use, BJT cut-off mode acts as an __.

ON switch

In switching use, BJT saturation mode acts as an __.

Amplifier

In switching use, BJT active mode is used as an __.

Electrons

In an NPN BJT's active region, __ from the emitter diffuse toward the base.

Thin base layer

Diffused electrons move on to the collector (instead of recombining) mainly due to the __.

Collector current

Electrons reaching the collector terminal from the base produce the __.

Holes

In an NPN BJT's active region, __ from the base diffuse toward the emitter, producing base current.

Base current

By KCL, BJT emitter current equals collector current plus __.

b (beta)

The ratio IC/IB defines the BJT parameter __.

y (b+1)

The ratio IE/IB defines the BJT parameter __.

a

The ratio IC/IE defines the BJT parameter __, equal to β/(β+1).

Current-controlled device

A BJT is classified as a __, since IC = f(IB).

βIB

In the large-signal model, IC is expressed as __.

No limitation

Unlike the small-signal model, the large-signal BJT model places __ on VBE.

Diode model

The large-signal emitter current equation IE = ISE·e^(VBE/VT) approximates a __.

Any

The large-signal model can represent BJT behavior at __ voltage/current level in the active region.