AVIA 1083 W2

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189 Terms

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BJT stands for…?

Bipolar Junction Transisto

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What are the three terminals of a BJT?

Base (B), Collector (C), and Emitter (E)

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Two types of BJT

NPN and PNP

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In a BJT, what is the relationship between emitter current (IE), base current (IB), and collector current (IC)?

IE = IB + IC

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Formula for the DC current gain (β or hFE) of a transistor?

β or hFE = IC / IB

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What does the base-emitter forward-bias voltage vs. Current graph look like?

Very similar to the forward bias graph of a Silicon diode

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At what VBE does a silicon BJT start to conduct significant current?

Approx. 0.6 Vdc (after which current increases rapidly).

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What is meant by the "constant current characteristic" of a transistor's output?

The transistor's output current (IC) remains relatively constant while the Collector-Emitter voltage (VCE) changes

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Formula for static (DC) input resistance of a transistor

DC Input Resistance = VBE / IB

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Formula for dynamic (AC) input resistance of a transistor

AC Input Resistance = ΔVBE / ΔIB

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Formula for static (DC) output resistance of a transistor

DC Output Resistance = VCE / IC

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Formula for dynamic (AC) output resistance of a transistor

AC Output Resistance = ΔVCE / ΔIC

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Symbol for static transistor gain?

hFe

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Symbol for dynamic transistor gain?

hfe

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Formula for static current gain

hFE = IC / IB

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Formula for dynamic current gain

hfe = ΔIC / ΔIB

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For most small-signal transistors, what is the typical maximum collector current range?

1 to 10 mA

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Why is it important to design circuits based on the minimum value of transistor gain?

To ensure successful operation of the circuit across different transistors (since gain varies)

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Darlington pair

A compound structure consisting of two bipolar transistors connected so that the current amplified by the first transistor is amplified further by the second

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Main advantage of a Darlington pair?

It gives a much higher common-emitter current gain than each transistor taken separately

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In an integrated Darlington pair, what do the two transistors share?

They can use a shared collector.

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3 basic circuit configurations for transistor amplification

Common-Emitter, Common-Collector, and Common-Base.

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In the Common-Emitter configuration, where is the input applied and where is the output taken from?

[CE] Input: between Base and Emitter. Output: between Collector and Emitter.

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Key characteristics of a Common-Emitter amplifier? (Voltage gain, current gain, phase shift)

[CE] Voltage Gain: Medium/High (≈40); Current Gain: High (≈200); Phase Shift: 180°.

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Typical application for a Common-Emitter amplifier

General purpose, AF (Audio Frequency) and RF (Radio Frequency) amplifiers.

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In the Common-Collector configuration, where is the input applied and where is the output taken from?

[CC] Input: directly to the Base. Output: from the Emitter load.

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What are the key characteristics of a Common-Collector amplifier? (Voltage gain, input/output resistance, phase shift)

[CC] Voltage Gain: None (≈1); Input Resistance: High (≈100 kΩ); Output Resistance: Low (≈100 Ω); Phase Shift: 0°.

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Typical application for a Common-Collector amplifier?

Impedance matching (input to output)

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In the Common-Base configuration, where is the input applied and where is the output taken from?

[CB] Input: between Base and Emitter. Output: between Base and Collector

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What are the key characteristics of a Common-Base amplifier? (Voltage gain, current gain, phase shift)

[CB] Voltage Gain: High (≈200); Current Gain: None (actually attenuates, negative gain); Phase Shift: 0°.

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Typical application for a Common-Base amplifier?

RF and VHF (Very High Frequency) amplifiers

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Which transistor amplifier configuration produces the highest current and power gain?

Common-Emitter

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Which transistor amplifier configuration is best for impedance matching?

Common-Collector

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Which transistor amplifier configuration "attenuates" the input signal (negative current gain)?

Common-Base

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IC max

IC max: maximum collector current

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VCE max

VCE max: maximum collector-emitter voltage

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PTOT max

PTOT max: maximum device power dissipation

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bFE represent…?

[bFE] typical value of common-emitter current gain

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A bipolar transistor has a common-emitter current gain of 125. If the collector current is 50 mA, what is the base current?

IB = IC / β → 50 mA / 125 = 0.4 mA (or 400 µA)

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To amplify an input signal in a Common-Emitter circuit, how must the junctions be biased?

[CE] The Base-Emitter junction must be forward biased, and the Base-Collector junction must be reverse biased

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What is the purpose of biasing a transistor?

Biasing establishes the proper operating conditions for the transistor and stabilizes the base so the input signal operates over the linear portion of the transistor

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In the voltage divider bias method, which components accomplish biasing?

Two resistors (R1 and R2) acting as a voltage divider, along with the power supply (Vcc)

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How does holding the input to the Base (IB) at a constant steady voltage help the transistor?

It allows for the best stability in the transistor

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Where are Common-Emitter amplifiers often used?

Audio, radio, and TV applications

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What effect does the Emitter resistor (RE) have on the output of a Common-Emitter amplifier?

It reduces the gain of the transistor (because the transistor sees a lower difference between base and emitter voltage)

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How is the loss of gain from RE corrected?

By adding a capacitor (C2) in parallel with RE

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What does the Emitter bypass capacitor (C2) do?

It provides another path for the AC signal current to flow, allowing more gain in the transistor

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What happens when a transistor is operated beyond its normal range (above or below)?

The transistor will clip the wave

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What is the result of clipping in an audio circuit?

Poor audio quality (distortion)

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In Class A amplification, what is the conduction output wave angle?

360° (conducts over the entire input cycle)

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Where is the Q-point located for a Class A amplifier?

At the centre point of the load line

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What is the overall efficiency and signal distortion of a Class A amplifier?

Efficiency: Poor (5–40%). Distortion: None (if correctly biased)

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In Class B amplification, what is the conduction output wave angle?

180° (amplifies only half of the input wave cycle)

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Where is the Q-point located for a Class B amplifier?

Exactly on the Vout axis

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What is the overall efficiency and signal distortion of a Class B amplifier?

Efficiency: Better (40–70%). Distortion: At the X-axis crossover point

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In Class C amplification, what is the conduction output wave angle?

Less than 90° (conducts less than 50% of the input signal)

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Where is the Q-point located for a Class C amplifier?

Below the Vout axis

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What is the overall efficiency and signal distortion of a Class C amplifier?

Efficiency: Higher (70–90%). Distortion: Large amount

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What is the typical application for a Class C amplifier?

RF transmitters operating at a single fixed carrier frequency (distortion is controlled by a tuned load)

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In Class AB amplification, what is the conduction output wave angle?

180° (but also conducts a small amount on the other half).

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Where is the Q-point located for a Class AB amplifier?

Slightly above the Vout axis

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What is the main advantage of Class AB over Class B?

AB greatly minimizes or eliminates the crossover distortion (the "dead zone" is reduced).

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Field Effect Transistor (FET)

A transistor that uses an electric field to control the shape and conductivity of a channel of one type of charge carrier in a semiconductor material

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3 terminals of a FET

Gate (G), Drain (D), and Source (S)

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How does a FET control the flow of electrons or holes from source to drain?

By affecting the size and shape of a "conductive channel" created by voltage applied across the gate and source terminals

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2 main types of FETs

JFET (Junction Field Effect Transistor) and MOSFET (Metal-Oxide-Semiconductor FET)

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JFET

The simplest type of field-effect transistor; a three-terminal semiconductor device used as an electronically-controlled switch, amplifier, or voltage-controlled resistor

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How are JFETs controlled, unlike bipolar transistors?

They are exclusively voltage-controlled and do not need a biasing current

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How is the channel "pinched" in a JFET?

By applying a reverse bias voltage to the gate terminal, which impedes or switches off the electric current

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What is the normal state of a JFET when there is no potential difference between its gate and source?

It is usually ON

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What happens when a potential difference of the proper polarity is applied between the gate and source?

The JFET becomes more resistive to current flow (less current flows in the channel)

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Why are JFETs sometimes referred to as depletion-mode devices?

Because they are normally ON and a reverse bias voltage is required to deplete the channel and turn them off

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The Gate-Source junction of a JFET is effectively what?

A reverse biased P-N junction

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In a JFET, what surrounds the channel of P or N material?

The opposite type of material, which has a connection called the Gate

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How is the effective width of the JFET channel controlled?

By the amount of charge applied to the Gate (which controls the depletion region)

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What happens to the depletion region as the negative potential difference at the gate increases?

Depletion region grows larger (like a reverse-biased diode), eventually cutting off the flow in the channel and turning the JFET OFF

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What is a major advantage of JFETs compared to bipolar transistors?

Much higher input resistance (ideal where high input resistance is required)

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In the JFET graph of Drain Current (ID) vs. Gate-Source Voltage (VGS), what happens to the current as the negative potential difference becomes greater?

The current through the JFET is reduced

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In the JFET output characteristics graph (ID vs. VDS), what is indicated at the end of each curve?

The negative voltage applied to the Gate in comparison to the Source (VGS)

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How is the constant current achieved in a JFET?

By the reverse bias control of the Gate to Source

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What is the gain in a JFET normally expressed in terms of?

Forward Transconductivity (gfs or Yfs)

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What is the formula for static (DC) forward transconductivity?

ID / VGS

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Unit of transconductivity

The siemens (S), where 1 siemens = 1 ampere per volt

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If ID = 12 mA and VGS = 1 V, what is the static forward transconductivity?

12 mA / 1 V = 12 mS

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What is the formula for dynamic (AC) forward transconductivity?

ΔID / ΔVGS

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Using the example from the PDF: When VGS changes by 2.5 V and ID changes by 12 mA (from the graph), what is the dynamic forward transconductivity?

12 mA / -2.5 = 2 mS

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What does MOSFET stand for?

Metal-Oxide-Semiconductor Field-Effect Transistor

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What is a MOSFET used for?

Amplifying or switching electronic signals

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4 terminals of a MOSFET

Source (S), Gate (G), Drain (D), and Body (B)

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Why is a MOSFET often treated as a three-terminal device?

Because the body (substrate) is often connected to the source terminal.

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What are the two types of MOSFET channels?

N-channel and P-channel

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In the MOSFET construction diagram, what separates the Gate from the P-type Silicon?

A metal layer and an oxide layer

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Region that forms under the oxide in a MOSFET?

The Depletion Region

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Integrated Circuit (IC)

A set of electronic circuits on one small plate ("chip") of semiconductor material, normally silicon.

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What are three other common names for an integrated circuit?

Chip, microchip, or monolithic integrated circuit

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2 main advantages of ICs over discrete circuits

Cost and performance

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Why is IC cost low?

Millions of transistors are printed as a complete unit by photolithography, not constructed one at a time

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Why is IC performance higher?

Components switch quickly and consume little power

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2 classifications of integrated circuits

Linear (Analogue) and Digital (Logic) type circuits

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Scale of integration

The relative size of a digital IC in terms of the number of active devices (logic gates) it contains