Semiconductor Physics Vocabulary

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Vocabulary flashcards covering intrinsic and extrinsic semiconductors, carrier concentrations, mobility, drift velocity, and current density equations based on lecture notes.

21 Terms

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Intrinsic Semiconductor

A pure semiconductor where the number of holes and free electrons are equal (n=pn = p).

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Extrinsic Semiconductor

An impure semiconductor formed by doping, classified into P-type and N-type semiconductors.

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P-type Semiconductor

An extrinsic semiconductor doped with trivalent elements (such as Boron or Al), where holes are majority carriers and electrons (e−e^-) are minority carriers.

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N-type Semiconductor

An extrinsic semiconductor doped with pentavalent elements (such as Phosphorus, Ph, or Sb), where electrons (e−e^-) are majority carriers and holes are minority carriers.

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Doping

The addition of impurities to a semiconductor to increase its conductivity.

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Extrinsic Semiconductor Conductivity Formula

The formula σ=q(nμn+pμp)\sigma = q (n \mu_n + p \mu_p), where σ\sigma is conductivity, qq is electron charge, nn is electron concentration, μn\mu_n is electron mobility, pp is hole concentration, and μp\mu_p is hole mobility.

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Electron Concentration (nn)

The concentration of electrons present in a semiconductor.

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Hole Concentration (pp)

The concentration of holes present in a semiconductor.

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Electron Mobility (μn\mu_n)

The mobility corresponding to electrons in a semiconductor material.

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Hole Mobility (μp\mu_p)

The mobility corresponding to holes in a semiconductor material.

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Intrinsic Semiconductor Temperature Characteristic

Conductivity of a pure semiconductor is low at room temperature, zero at 0 K0\,\text{K} (Zero Kelvin), and increases as temperature increases.

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Drift Velocity (vdv_d)

The velocity of charge carriers in the direction opposite to an applied electric field EE, with magnitude vd=μEv_d = \mu E proportional to the constant electric field.

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Mobility (μ\mu)

The proportionality constant relating drift velocity vdv_d to electric field EE in vd=μEv_d = \mu E.

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Current Density (JJ)

The total electric current per unit area, defined as J=nqvd=nqμE=σEJ = n q v_d = n q \mu E = \sigma E, where σ=nqμ\sigma = n q \mu.

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Conduction Electrons

Electrons in the valence band that acquire thermal energy greater than the bandgap energy, moving into the conduction band where they become free charge carriers.

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Electron Current Density (JnJ_n)

The current density due to the motion of electrons, expressed as Jn=nμnqE=σnEJ_n = n \mu_n q E = \sigma_n E.

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Hole Current Density (JpJ_p)

The current density due to the motion of holes, expressed as Jp=pμpqE=σpEJ_p = p \mu_p q E = \sigma_p E.

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Total Current Density Formula

The combined current density J=Jn+Jp=(σn+σp)E=q(nμn+pμp)E=σEJ = J_n + J_p = (\sigma_n + \sigma_p) E = q (n \mu_n + p \mu_p) E = \sigma E.

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Intrinsic Current Density Formula

For an intrinsic semiconductor where n=p=nin = p = n_i, total current density is J=ni(μn+μp)qEJ = n_i (\mu_n + \mu_p) q E.

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Recombination

The process where an electron and a hole meet and disappear, balancing the continuous generation of new electron-hole pairs by thermal energy.

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Carrier Motion in Electric Field

Negative electrons and positive holes move in opposite directions under an applied electric field EE, but because they carry opposite charges, their resulting currents flow in the same direction.