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TFT
thin-film transistor
flat-panel amorphous silicon and amorphous selenium detectors were introduced in 1995
first devices to move beyond the cassette into detector that would reside in the table or wall stand
also can be used portably as a wireless device
the materials used for detecting the x-ray signal and the sensors for recognizing that signal are permanently enclosed inside a protective housing
AMFPI
active matrix flat-panel imagers
consist of a flat-panel array with an x-ray absorption material associated with TFT technology
pixels (detector element-Del) are arranged in matrix
two types of x-ray absorption materials in use today:
photoconductors
scintillators
measures the response of these materials to x-ray absorption
the absorption material is attached to the surface of this array either electrically (photoconductor) or physically (scintillating phosphor material)
two major types of x-ray conversion:
indirect conversion
direct conversion
the x-ray absorption material determines whether the detector is direct or indirect conversion
photoconductors
absorb x-rays resulting in an electrical charge
direct conversion type
scintillators
phosphors that produce light when absorbing x-rays (need photodiode for converting light into electrical signal
indirect conversion type
direct conversion
1 step: from x-ray to latent image
x-ray photons are absorbed by the coating material and immediately converted into an electrical signal
the flat panel detector has a photoconductor, typically made of amorphous selenium
(a-Se)
absorbs x-rays, converts it into electrons
this material absorbs x-rays and converts them to electrons (electrical signal), and then stored in TFT array — latent image
the TFT is a photosensitive array made up of small pixels
these pixels are also called a detector element (del) in TFT arrays
each pixel includes light (x-ray) sensitive material and related electronic devices
converts x-ray into electrical charges
more than 1 million pixels can be read and converted to a composite digital image in less than 1 second
TFT isolates each pixel element
reacts like a switch to send the electrical charges to the image processor
a line of TFT switches, each associated with a storage capacitor, allows electrical charge information to discharge when switches are closed
the information is discharged onto the data columns and it read out with dedicated electronics
specialized circuits are connected along the edges of the detector matric
on one side, integrated circuits control the line scanning sequence
on the other, low-noise, high-sensitivity amplifiers perform the readout, amplification, and analog-to-digital conversion
indirect conversion
a two-step process:
x-ray photons are converted to light, and then the light photons are converted to an electrical signal
a phosphor such as Gd2O2S or thallium-doped cesium iodide (CsI[TI]) rapidly absorbs x-rays and produces light
the phosphor layer is known as the scintillation layer
the scintillation layer can either be structure or unstructured
the light is converted into an electrical charge by the photodiode, i.e. hydrogenated amorphous silicon (a-Si:H) photodiode array
then electrical signal is digitalized by ADC and sent to computer for processing
Gd2O2S detectors
made from small crystals bound together in an unstructured or turbid (powered granules) layer along with a polyurethane material
the crystalline layer is filled with air pockets that allow light that was generated in the phosphor to escape
allows the light to escape laterally before it reaches the surface
light spreading, reducing the efficiency of the phosphor and lowering spatial resolution
unstructured layers produce more scatter light, decreasing detector efficiency
CsI detectors
the most popular type of amorphous silicon detector uses a CsI scintillator
scintillator is grown into very thin crystalline needles (5 micrometer wide) perpendicular to the detector surface that works as light-directing tubes, much like fiber optics
considered a structure scintillator
this allows for greater detection of x-rays
better DQE performance than Gd2O2S scintillator
there is almost no light spread, the spatial resolution is higher
from x-ray to electrical signal = two-steps
flat-panel array design and performance
each pixel contains a sensing component and a switching component
TFT: acts as a switch of stored charges
Capacitor: for electrical charge storage
fill factor
pixel pitch
for it to operate, there are about 2.5 km or 1.6 miles of electrical bias (a predetermined amount of voltage or current in the electrical circuit), control, and signal output lines laid out on the array surfaces so that each pixel is monitored and refreshed during the control and reading process
each row of pixels is connected to the same horizontal control line, and each column is connected to the same vertical data line
the readout electronics are attached to the edges of the array, and the entire array and its components are enclosed in a protective housing
when the exposure is made, the sensing and storage component within the pixel contains the image information
the information is read out line by line by changing the control line voltage
each pixel is connected to its corresponding data line at the bottom of the column
the process of returning to the state varies per vendor
after release of its signal, the readout process continues to row two
after the signal has been released, the energy is then transferred to the electronics that are attached to the edges of the array
currently flat-panel a-Si:H detectors perform better than other digital imaging systems
DQE, spatial resolution, contrast resolution
fill factor
defined as the ratio of light-sensitive areas of a pixel (or detector element) to the total area of the pixel
it is in percentage
higher = better performance (DQE)
pixel pitch
the physical distance between two adjacent pixels from center to center
the smaller the distance, the smaller the pixel pitch, the higher the spatial resolution
flat-panel array detector performance
detector performance measures:
numerical measurement of spatial resolution and DQE
observation of low contrast objects in a contrast detail phantom
detective quantum efficiency (DQE)
the measurement of the efficiency of a detector in converting incident x-ray energy into an image signal
spatial resolution
the ability of an imaging system to differentiate two adjacent structures as being distinct from one another
refers to an imaging system’s ability to distinguish between small details or objects that are close together
it’s a measure of how sharply an imaging system can represent fine structures within an image
contrast resolution (low contrast resolution)
observation of low contrast objects in a contrast detail phantom
the ability of any imaging modality to distinguish between differences in image intensity
flat-panel artifacts
dead pixels
incorrect gain calibration
image lag and incorrect offset correction
because manufactures of the pixels is so complex, it is inevitable that the array structure will sustain some damage
dust, scratches, static discharge, chemical corrosion, and interactions between materials can occur, resulting in some defective pixels
dead pixels
some pixels may be malfunctioning or dead (not functioning at all)
as the detector ages, the number of dead pixels increases
these may not be detected if they are located on the edges of the panel
manufacturers build software programs into their systems to identify and isolate dead pixels
the software “fills in” the dead pixels with information from surrounding pixels
incorrect gain calibration
gain calibration is used to correct flaws in the detector
if an area of the detector has a large amount of dead pixels or if there is in area of the detector that has poor connection between the conversion layer and the a-Si/TFT array, a noticeable artifact can be seen on the screen
to remove the potential of having the artifact interfere with diagnosis, a process known as gain calibration or flat fielding occurs
this process will remove these densities on the image by creating a mask of those defects. When the subsequent image is taken, the software will use the mask to remove unwanted densities and leave only the diagnostic information
gain calibration should be performed under the same or similar circumstances in which clinical images will be taken
the calibration should be done according to the equipment manufacturer’s guidelines
these faint marks could lead to a misdiagnosis
image lag
some flat-panel systems have the ability to take images faster than the detector can accommodate
if an image is taken before the detector releases all previous signal, a faint image of the previous exposure may be visible (image lag)
when the detector is unable to eliminate all of the signals from the previous image, lag can occur
caused by rapid image succession and overexposure or an area with too little beam attenuation
to reduce the possibility of image lag:
increase the delay between exposures
collimate closely to reduce the unattenuated beam
set appropriate technical factors
if multiple examinations are being done, acquire the image requiring the highest technique factors last
can also be corrected with the detector’s software using the dark noise or offset correction
offset correction
refers to the background electronic signal generated by the digital detector system in the complete absence of x-ray radiation
determines the amount of signal inherent in the detector
if offset correction is performed before residual signal leaves the pixels, that information will be stored as inherent and could cause a negative image of the residual signal
always follow the equipment manufacturer’s guidelines when performing any detector calibration