exam 2 semi-conductor

True or False: Traps are the discrete energy state within the bandgap.

True

True or False: If temperature decreases the probability of lattice scattering decreases. As a result, the mobility of charge carriers increases.

True

True or False: If doping is very high, concentration of ionized impurities increases. So, the mobility of charge carriers decreases sharply.

True

True or False: When there is an electric field there will be a diffusion current.

False

True or False: Band to band recombination dominates in direct band gap semiconductor materials and SRH recombination dominates in Indirect band gap semiconductor materials.

True

True or False: If material1 has higher mobility than material 2, then for the same applied electric field, the material 2 will have higher velocity than material 1.

False

True or False: Sometimes electric field may exist inside the semiconductor due to the graded impurity distribution.

True

True or False: Low level injection has negligible influence on majority carriers.

True

True or False: If bandgap is higher, then the intrinsic carrier concentration will also be higher.

False

True or False: Donor ionization energy level typically in the range of smaller than thermal energy level.

True

True or False: In an intrinsic semiconductor, fermi energy level is in the middle of band gap. It is called Intrinsic energy level.

True

True or false: At higher temperature carrier concentration rises linearly.

False

True or False: 50% of the donor will ionize if fermi energy level is equal to donor energy level.

False

True or False: The vibrating atoms and ionized impurities are related to doping and temperature.

True