While the memory is operating, each memory cell must be refresh repeatedly.
It uses specialized cycles called refresh cycles.
the storage cells on a memory chip are laid out in a rectangular array of rows and columns.
The read process in DRAM is destructive. It removes the charge in a memory cell in an entire row.
There is a row of specialized latches on the chip called sense amplifiers. One for each column of memory cells, to temporarily hold the data.
During a normal read operation, the sense amplifiers latch and read the data.
The normal read electronics on the chip can refresh an entire row of memory in parallel, speeding up the refresh process.
The refresh cycle and the read cycle are similar, but refresh is faster.
It is faster because: 1. For a refresh, only a row access is needed. 2. Data read from the cells doesn’t need to be fed into the output buffers.
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