Formation of Junction: Understanding how a p-n junction is formed.
Physical Operation of Diode: Overview of how diodes function.
Contact Potential and Space Charge Phenomena: Explanation of the built-in potential and depletion regions.
I-V Characteristics: Characteristics of current-voltage behavior in diodes.
Zener Diodes: Specialized behavior of Zener diodes.
Physical Operation of Special Diodes:
Tunnel Diode: Quantum tunneling effect in operation.
LED (Light Emitting Diode): Emission of light through electron recombination.
OLED (Organic LED): Use of organic compounds for light emission.
Photodiode: Conversion of light to electrical energy.
Varactor Diode: Voltage-variable capacitance behavior.
Movement of carriers creates:
Space Charge Region: Depletion region forms at the junction, influenced by charge carriers.
Induced Electric Field: The electric field near x=0 and built-in potential voltage (vbi) develops across the junction.
The space charge or depletion region creates an electric field that results in a potential voltage (vbi) across the junction.
Key components affecting built-in potential:
Energy Bands: EC, EV, Ei, EF and their relationships between n-region and p-region.
Depletion Region Analysis: Relationships and calculations involving charge densities (q, Nd, Na).
Application of voltage (vD)
Induces an electric field, EA, which opposes the original space-charge electric field.
Results in a smaller net electric field and reduced barrier between n and p region.
Characteristics under reverse bias conditions:
Increase in space-charge width (W).
Increases VR leading to additional fixed charges affecting junction capacitance.
Visual representation of energy bands and potential differences:
Movement of energy bands under forward and reverse conditions.
Visualization of electric fields and voltages across junctions.
Concepts to Understand:
Charge Density: Distribution within depletion region and across p and n materials.
Poisson's Equation: Governing the electric field and charge distributions in semiconductor physics.
Electric Field Strength: Calculation of maximum electric field based on doping concentrations (Na, Nd).
Diode conducts significant current only in forward bias,
I-V curve modeled as exponential function in forward bias.
Near-zero current in reverse bias region.
The fundamental equation relating current and voltage in diodes:
Describes temperature dependence (kT/q known as thermal voltage, VT).
VT = 25.9 mV at 300K.
Breakdown voltage (BV) behavior in diodes:
Heavily doped diodes exhibit lower breakdown voltage.
Significant current increase upon breakdown occurrence.
Zener Effect: Electron tunneling in heavily doped diodes under reverse bias.
Diagrams demonstrating operational characteristics.
Avalanche Breakdown: Explaining charge multiplication under reverse bias conditions.
Breakdown diode designed for specific breakdown voltage (Zener diode).
Operates via quantum mechanical tunneling of electrons across potential barriers.
Known for negative resistance characteristics useful in oscillators.
V-I curves showcasing the distinct operating regions.
Characterized as voltage-variable capacitors.
Capacitance changes with the applied voltage, affecting depletion region geometries.
Describes metal-semiconductor contacts:
Characteristics of the Schottky barrier and its rectifying properties.
Details of Ohmic contact relationships based on metal-semiconductor interactions.
Differentiation based on the potential barrier heights.
Photodiodes convert light into electrical current through the photovoltaic effect.
Operate in reverse bias when illuminated.
Convert electrical energy into light (electroluminescence) during forward bias.
Utilize organic compounds for light-emitting capabilities; used in displays.
Transparent electrodes are common in OLED technology.