Single-ended: referenced to a fixed node (usually ground)
Representation: V{SE}(t)=V0\cos\omega t+V_{CM}
Differential: measured between two nodes that swing equally and oppositely around a common-mode (CM) level
Representation: V{diff}(t)=VX-VY=2V0\cos\omega t
With single-ended amplitude V0, single-ended pp swing = 2V0, differential pp swing = 4V_0
CM level = dc bias around which both phases move; must see equal impedances to ground for “true” differential behaviour
Typical benefit: with a 1-V supply one can still obtain ≈1.6-V differential pp swing
Common-Mode Noise Rejection (CMR)
Capacitive coupling from neighbouring aggressors (e.g., clock lines) appears as equal disturbance on both phases and cancels in the subtraction
Shielding can be combined with differential routing; twisted-pair routing equalises coupling asymmetries
Supply noise rejection
Single-ended common-source (CS) stage: \Delta V{DD}\rightarrow \Delta V{out} directly
Differential pair: equal shifts at both drains, VX-VY unchanged
Larger allowable swings
CS: max swing ≈ V{DD}-V{GS}+V_{TH} (one overdrive from rail)
Differential: single-ended swing V{DD}-(V{GS}-V{TH}), differential swing 2[V{DD}-(V{GS}-V{TH})]
Higher linearity, simpler biasing, modest area penalty (~2× devices)
Two matched transistors share tail current I_{SS} implemented by a current source (or degenerated by a resistor)
Resistive loads R{D1}=R{D2}=R_D provide voltage conversion
Bias conditions (equilibrium): I{D1}=I{D2}=I{SS}/2, V{out,CM}=V{DD}-RD\frac{I_{SS}}{2}
Differential input \Delta V{in}=V{in1}-V_{in2} steers the tail current
\Delta V{in}\ll0 → M1 off, M2 carries I{SS}
V{out1}=V{DD}, V{out2}=V{DD}-RDI{SS}
\Delta V_{in}=0 → current splits equally; outputs sit at CM level
\Delta V_{in}\gg0 → opposite condition; current “hogs” into M1
Output transfer characteristic for V{out1}-V{out2} is odd-symmetrical, maximum slope at equilibrium
Allowable CM range:
V{GS1}+(V{GS3}-V{TH3})\le V{in,CM}\le \min\Big(V{DD}-\frac{RDI{SS}}{2}+V{TH},\;V_{DD}\Big)
Lower bound: both input devices must be on + tail source in saturation
Upper bound: avoid triode operation at outputs
Each side: V{out,min}\approx V{in,CM}-V{TH}, V{out,max}=V_{DD}
Single-ended pp swing =V{DD}-\big(V{GS1}-V{TH1}\big)-\big(V{GS3}-V_{TH3}\big)
Differential pp swing ≈ twice the above
Relationship between input difference and drain current difference:
\Delta ID=I{D1}-I{D2}=\sqrt{\munC{ox}\frac{W}{L}I{SS}}\,\Delta V{in}\Bigg[1-\frac{\munC{ox}(W/L)}{4I{SS}}\Delta V_{in}^2\Bigg]^{1/2}
Cut-off (one side off):
|\Delta V{in,1}|=\sqrt{\frac{2I{SS}}{\munC{ox}(W/L)}}=\sqrt{2}\,V_{OV(eq)}
Small-signal transconductance at equilibrium:
Gm(\text{diff})=\sqrt{\munC{ox}\frac{W}{L}I{SS}}=g_m
Small-signal differential gain (resistive load):
|Av|=gmR_D
Gm maximal at \Delta V{in}=0, falls to 0 at cutoff
Larger I{SS} → higher Gm & wider linear range; larger W/L increases G_m but narrows range
Degeneration (source resistor RS) widens linear input range by \pm RSI{SS} while reducing gain to |Av|=RD/(gm^{-1}+R_S)
For fully differential small-signal excitation, node P is an ac ground because equal/opposite input swings cause equal source currents → no small-signal voltage change at tail
Each half behaves as a CS stage: differential gain again =gmRD
With channel-length modulation: |Av|=gm(RD\parallel rO)
Finite tail impedance R{SS} gives common-mode gain: A{v,CM}=\frac{-RD/2}{R{SS}+1/(2g_m)}
Mismatch (e.g., \Delta RD or \Delta gm) converts CM variations to differential error:
A{CM\rightarrow DM}=\frac{-\Delta gm\,RD}{(g{m1}+g{m2})R{SS}+1}
CMRR definition:
\text{CMRR}=\left|\dfrac{A{DM}}{A{CM\rightarrow DM}}\right|\approx\dfrac{2gm^2R{SS}}{\Delta gm} (for gmR_{SS}\gg1)
High-frequency CM disturbances are worsened by tail capacitance C_{SS}
Body-effect mismatch can still cause CM→DM conversion even with ideal tail source
Splitting I{SS} allows large RS without extra headroom; no dc drop across resistors at equilibrium → maintains swing
Diode-connected PMOS loads (Fig. 4.37a)
Small-signal gain Av\approx-\dfrac{g{mN}}{g{mP}}\approx-\sqrt{\dfrac{\mun(W/L)N}{\mup(W/L)_P}}
Consume |V{GS}-V{TH}| headroom each
PMOS current-source loads (Fig. 4.37b)
Av\approx-g{mN}(r{oN}\parallel r{oP})
Gain limited (~5–10 in nano-CMOS)
Adding helper current sources (Fig. 4.39) lowers PMOS bias current, boosting gain without extra headroom; resistive loads + PMOS mirrors combine high swing with moderate gain
Cascoding NMOS & PMOS increases output impedance dramatically:
|Av|\approx g{m1}\big[(g{m3}r{o3}r{o1})\parallel(g{m5}r{o5}r{o7})\big]
Trades swing and headroom for gain; requires bias voltages V{b1},V{b2},V_{b3}
Built by stacking two input pairs on a differential current-steering pair
Signal pair (M1–M4) steers current to loads; control pair (M5–M6) directs tail current between upper pairs
Output: V{out}=RD[(I{D1}+I{D4})-(I{D2}+I{D3})]
Differential gain proportional to control voltage; varies continuously from +gmRD through 0 to -gmRD
Acts as analog multiplier: V{out}=\alpha\,V{in}\,V_{cont} (first-order term)
Requires ≥ one extra overdrive of headroom for stacked topology
Alternative form: input pair at bottom, control pair on top (Fig. 4.43)
Gain vs. Linearity: larger I_{SS} or degeneration improves linearity; larger W/L boosts gain but worsens linearity window
Headroom budgeting critical in low-VDD designs; diode loads & cascoding eat voltage
Nanometer CMOS: \lambda large → intrinsic gain small; cascoding or gain-boost techniques necessary
Output CM regulation circuits (not covered here) needed for fully differential high-gain op-amps
Example 4.1 (Routing): twisted-pair geometry can null both aggressor & victim differential couplings
Example 4.2: small-signal gain vs. V{in,CM} rises after V{TH}, plateaus once tail in saturation, falls when inputs enter triode
Example 4.3: differential pair offers pp swing of 2V{DD}-4V{D,sat} vs. CS stage’s V{DD}-V{D,sat}
Example 4.4: increasing W/L shrinks linear range; increasing I_{SS} widens it and raises current swing
Example 4.5 (Offset): dc imbalance equal to half-cutoff voltage biases one side to 83 % of I{SS}, reduces Gm by ≈20 %
Example 4.9: 50-mV CM error with 500-Ω tail resistor drops output CM by ≈97 mV, pushing inputs toward triode
Example 4.10: CM→DM conversion rises with frequency (tail capacitance), proportional to 1/\omega reduction in impedance
Differential signalling increases robustness but doubles device count & routing width; area/power trade must be justified by noise immunity
Poor CMRR can corrupt precision analog paths; meticulous matching, symmetric layout, and high-impedance current sources mandatory
VGA/Gilbert cell used in AGC loops; linearity and temperature stability crucial to avoid distortion & gain error