PHY1008 Engineering Physics Formula Sheet and Comprehensive Study Guide

Module 5: Magnetic Materials

  • Basic Magnetic Relations

    • Magnetic Susceptibility (χm\chi_m): Defined as the ratio of magnetisation to field intensity, given by the formula χm=MH\chi_m = \frac{M}{H}. Here, MM is the magnetisation (A/mA/m) and HH is the magnetic field intensity (A/mA/m).
    • Relative Permeability (μr\mu_r): Represents the ratio of the permeability of a specific medium to the permeability of free space, calculated as μr=1+χm\mu_r = 1 + \chi_m.
    • Absolute Permeability (μ\mu): Calculated as the product of the permeability of free space and the relative permeability, μ=μ0×μr\mu = \mu_0 \times \mu_r. The value of μ0\mu_0 is 4π×107H/m4\pi \times 10^{-7}\,H/m.
    • Magnetisation (MM): Can be expressed as the product of susceptibility and field intensity: M=χm×HM = \chi_m \times H.
    • Magnetic Flux Density (BB): Measured in Tesla (TT) or Webers per square meter (Wb/m2Wb/m^2). It is given by B=μ0(H+M)=μ0μrH\mathbf{B} = \mu_0(H + M) = \mu_0 \mu_r H.
  • Orbital Electron — Atomic Magnetism

    • Frequency of Revolution (ff): The reciprocal of the time period, f=1Tf = \frac{1}{T}, where TT is measured in seconds (ss).
    • Orbital Velocity (vv): Calculated based on the orbit circumference and time period as v=2πrTv = \frac{2\pi r}{T}, where rr is the orbital radius.
    • Orbital Current (II): The current generated by the revolving electron is I=e×fI = e \times f, where e=1.6×1019Ce = 1.6 \times 10^{-19}\,C.
    • Magnetic Moment (mm): Defined as the product of current and the area of the orbit, m=I×A=I×πr2m = I \times A = I \times \pi r^2, where AA is the area of the orbit.
    • Bohr Magneton (μB\mu_B): The fundamental unit of magnetic moment, with a value of μB=9.274×1024Am2\mu_B = 9.274 \times 10^{-24}\,A \cdot m^2.
    • Magnetic Flux Density (BB) at the Centre of a Circular Orbit: Given by B=μ0I2rB = \frac{\mu_0 I}{2r}.
  • Magnetic Properties of Circular Loops (N turns)

    • Magnetic Moment (mm): For a loop with multiple turns, m=N×I×Am = N \times I \times A. Here, NN is the number of turns and A=πr2A = \pi r^2.
    • Magnetic Flux Density (BB) at the Centre: Calculated as B=μ0NI2rB = \frac{\mu_0 N I}{2r}.
    • Magnetic Flux (Φ\Phi): Measured in Webers (WbWb), defined as Φ=B×A\Phi = B \times A.
  • Curie's Law for Paramagnetism

    • Curie’s Law: The susceptibility is inversely proportional to the absolute temperature, χm=CT\chi_m = \frac{C}{T}, where CC is the Curie constant and TT is temperature in Kelvin (KK).
    • Temperature Scaling: For different states, the relationship follows χ1T1=χ2T2\chi_1 T_1 = \chi_2 T_2.
  • Saturation Magnetisation

    • Number Density of Atoms (nn): Calculated using the formula n=ρ×NAMAtn = \frac{\rho \times N_A}{M_{At}}, where ρ\rho is density, NA=6.022×1023/molN_A = 6.022 \times 10^{23}/mol (Avogadro's number), and MAtM_{At} is the atomic weight.
    • Saturation Magnetisation (MsM_s): Given by Ms=n×f×μBM_s = n \times f \times \mu_B, where ff represents the number of Bohr magnetons per atom.

Module 4: Semiconductors

  • Intrinsic Carrier Concentration

    • Intrinsic Carrier Density (nin_i): The formula is ni=4.83×1021×T3/2×exp(Eg2kT)n_i = 4.83 \times 10^{21} \times T^{3/2} \times \exp(\frac{-E_g}{2kT}). This specific version is valid when the effective masses are equal to the rest mass (me=mh=m0m_e^* = m_h^* = m_0).
    • Mass Action Law: In thermal equilibrium, the product of electron and hole concentrations is constant, n×p=ni2n \times p = n_i^2.
    • General nin_i from Density of States: ni2=NC×NV×exp(EgkT)n_i^2 = N_C \times N_V \times \exp(\frac{-E_g}{kT}), where NCN_C and NVN_V are the effective densities of states in the conduction and valence bands respectively.
  • Conductivity and Resistivity

    • Intrinsic Conductivity ((\sigma)): σ=ni×e×(μe+μh)\sigma = n_i \times e \times (\mu_e + \mu_h), where e=1.6×1019Ce = 1.6 \times 10^{-19}\,C.
    • Extrinsic Conductivity (nn-type): σNd×e×μe\sigma \approx N_d \times e \times \mu_e, where NdN_d is the donor density and NdniN_d \gg n_i.
    • Extrinsic Conductivity (pp-type): σNa×e×μh\sigma \approx N_a \times e \times \mu_h, where NaN_a is the acceptor density and NaniN_a \gg n_i.
    • Resistivity ((\rho)): Calculated as ρ=1σ\rho = \frac{1}{\sigma} and measured in Ωm\Omega \cdot m.
    • Resistance of a Rod (RR): Calculated as R=ρ×LAR = \frac{\rho \times L}{A}, where LL is the length and AA is the cross-sectional area.
    • Mobility ((\mu)): Defined as μ=vdE\mu = \frac{v_d}{E}, where vdv_d is the drift velocity and EE is the electric field in V/mV/m.
  • Temperature Dependence and Fermi Level

    • Two-Temperature Relation: ln(σ2σ1)=(Eg2k)×(1T11T2)\ln(\frac{\sigma_2}{\sigma_1}) = (\frac{E_g}{2k}) \times (\frac{1}{T_1} - \frac{1}{T_2}). This allows the calculation of the band gap (EgE_g) from two resistivity or conductivity measurements.
    • Fermi Level Position (EFE_F) for Equal Effective Masses: EF=Ev+Eg2E_F = E_v + \frac{E_g}{2}. The Fermi level sits exactly at the mid-gap.
    • Fermi Level Position (EFE_F) for Unequal Effective Masses: EF=Ev+Eg2+(3kT4)×ln(mhme)E_F = E_v + \frac{E_g}{2} + (\frac{3kT}{4}) \times \ln(\frac{m_h^*}{m_e^*}).
    • Electron Concentration from EFE_F: n0=NC×exp((ECEF)kT)n_0 = N_C \times \exp(\frac{-(E_C - E_F)}{kT}).
    • Hole Concentration from EFE_F: p0=NV×exp((EFEV)kT)p_0 = N_V \times \exp(\frac{-(E_F - E_V)}{kT}).
  • Hall Effect

    • Hall Coefficient for nn-type (RHR_H): RH=1n×eR_H = \frac{-1}{n \times e}; the negative sign indicates electrons are the charge carriers.
    • Hall Coefficient for pp-type (RHR_H): RH=+1p×eR_H = \frac{+1}{p \times e}.
    • Hall Voltage (VHV_H): VH=RH×I×BtV_H = \frac{R_H \times I \times B}{t}, where tt is the sample thickness in the direction of the magnetic field BB.
    • Hall Electric Field (EHE_H): EH=RH×J×BE_H = R_H \times J \times B, where JJ is the current density (A/m2A/m^2).
    • Carrier Density: n=1RH×en = \frac{1}{|R_H| \times e}.
    • Mobility from Hall Measurements: μ=RH×σ=RHρ\mu = |R_H| \times \sigma = \frac{|R_H|}{\rho}.
    • Drift Velocity (vdv_d): vd=Jn×ev_d = \frac{J}{n \times e}.
  • PN Junction and Optoelectronics

    • Built-in Potential (V0V_0): V0=(kTe)×ln(Na×Ndni2)V_0 = (\frac{kT}{e}) \times \ln(\frac{N_a \times N_d}{n_i^2}). The term kTe=0.02585V\frac{kT}{e} = 0.02585\,V at 300K300\,K.
    • LED Emission Wavelength ((\lambda)): λ=hcEg\lambda = \frac{hc}{E_g}. The product hchc is taken as 1240eVnm1240\,eV \cdot nm.
    • Solar Cell Fill Factor (FFFF): FF=PmaxIsc×VocFF = \frac{P_{max}}{I_{sc} \times V_{oc}}, where PmaxP_{max} is the maximum power obtained from the I–V curve.
    • Solar Cell Efficiency ((\eta)): η=PmaxPin=PmaxG×A\eta = \frac{P_{max}}{P_{in}} = \frac{P_{max}}{G \times A}, where GG is the irradiance (W/m2W/m^2).
    • Thermistor Resistance (RR): R=R0×exp(Eg2kT)R = R_0 \times \exp(\frac{E_g}{2kT}), where R0R_0 is a pre-exponential constant.

Module 3: Quantum Mechanics

  • de Broglie Wave-Particle Duality

    • de Broglie Wavelength ((\lambda)): λ=hp=hm×v\lambda = \frac{h}{p} = \frac{h}{m \times v}, where h=6.626×1034Jsh = 6.626 \times 10^{-34}\,J \cdot s.
    • Wavelength for Accelerated Particle (charge qq): λ=h2mqV\lambda = \frac{h}{\sqrt{2mqV}}, where VV is the accelerating potential in volts.
    • Quick Formula for Electrons: λ=12.27V…\lambda = \frac{12.27}{\sqrt{V}}\,\text{…}, with VV in volts.
    • Wavelength from Kinetic Energy (EkE_k): λ=h2mEk\lambda = \frac{h}{\sqrt{2mE_k}}, where EkE_k is in Joules.
  • Phase and Group Velocity

    • Phase Velocity (vpv_p): The speed of a single frequency wave component, vp=ωk=λ×fv_p = \frac{\omega}{k} = \lambda \times f, where ω\omega is angular frequency and kk is wave number.
    • Group Velocity (vgv_g): The speed of the wave packet envelope, vg=dωdkv_g = \frac{d\omega}{dk}.
    • General Relation: vg=vpλ×(dvpdλ)v_g = v_p - \lambda \times (\frac{dv_p}{d\lambda}).
    • Water Gravity Waves: Special case where vp=gλv_p = \sqrt{g\lambda}, then vg=vp2v_g = \frac{v_p}{2}.
    • Two Superposed Waves: vg=ΔωΔkv_g = \frac{\Delta \omega}{\Delta k} and packet phase velocity vp(packet)=ω1+ω2k1+k2v_p(packet) = \frac{\omega_1 + \omega_2}{k_1 + k_2}.
  • Heisenberg Uncertainty Principle

    • Position-Momentum: Δx×Δp(h2π)\Delta x \times \Delta p \ge (\frac{h}{2\pi}), where h2π=1.055×1034Js\frac{h}{2\pi} = 1.055 \times 10^{-34}\,J \cdot s.
    • Energy-Time: ΔE×Δt(h2π)\Delta E \times \Delta t \ge (\frac{h}{2\pi}).
    • Frequency Uncertainty: Δν=ΔEh\Delta \nu = \frac{\Delta E}{h}.
    • Velocity Uncertainty: Δv=Δpm\Delta v = \frac{\Delta p}{m}.
    • Minimum Kinetic Energy from Confinement (KEminKE_{min}): Calculated as KEmin=(Δp)22mKE_{min} = \frac{(\Delta p)^2}{2m}, where Δp=(h2π)Δx\Delta p = \frac{(\frac{h}{2\pi})}{\Delta x}.
  • Particle in a 1D Infinite Potential Box

    • Allowed Energies (EnE_n): En=n2π2(h2π)22mL2=n2E1E_n = \frac{n^2 \pi^2 (\frac{h}{2\pi})^2}{2mL^2} = n^2 E_1, for n=1,2,3,n = 1, 2, 3, \dots and box width LL.
    • Ground State Energy (E1E_1): E1=π2(h2π)22mL2E_1 = \frac{\pi^2 (\frac{h}{2\pi})^2}{2mL^2}.
    • Wave Function ((\psi_n(x))): ψn(x)=2L×sin(nπxL)\psi_n(x) = \sqrt{\frac{2}{L}} \times \sin(\frac{n\pi x}{L}) for 0xL0 \le x \le L.
    • de Broglie Wavelength in Box ((\lambda_n)): λn=2Ln\lambda_n = \frac{2L}{n}, fulfilling the standing-wave condition.
    • Probability Density: ψn2=(2L)×sin2(nπxL)|\psi_n|^2 = (\frac{2}{L}) \times \sin^2(\frac{n \pi x}{L}).
    • Probability in Interval [a, b]: P=abψ2dxP = \int_a^b |\psi|^2 dx.
    • Normalisation Condition: +ψ2dx=1\int_{-\infty}^{+\infty} |\psi|^2 dx = 1. This condition is used to determine the normalisation constant AA.

Module 2: Diffraction

  • Single-Slit Fraunhofer Diffraction

    • Minima Condition: a×sin(θm)=m×λa \times \sin(\theta_m) = m \times \lambda, where aa is slit width and m=±1,±2,m = \pm 1, \pm 2, \dots
    • Secondary Maxima: a×sin(θ)=(2m+1)×λ2a \times \sin(\theta) = (2m + 1) \times \frac{\lambda}{2}.
    • Half Angular Width of Central Maximum: sin(θ)=λa\sin(\theta) = \frac{\lambda}{a}.
    • Width of Central Maximum on Screen (WW): W=2λDaW = \frac{2\lambda D}{a}, where DD is the slit-to-screen distance.
    • Position of m-th Minimum (ymy_m): ym=mλDay_m = \frac{m\lambda D}{a}.
  • Double-Slit / Young's Experiment

    • Interference Maxima: p×sin(θ)=m×λp \times \sin(\theta) = m \times \lambda, where pp is the centre-to-centre slit separation and m=0,±1,±2,m = 0, \pm 1, \pm 2, \dots
    • Fringe Width ((\beta)): β=λDp\beta = \frac{\lambda D}{p}.
    • Position of m-th Bright Fringe (ymy_m): ym=mλDpy_m = \frac{m \lambda D}{p}.
    • Missing Orders Condition: n=pan = \frac{p}{a}. When this ratio is an integer, specific orders of diffraction are missing.
  • Diffraction Grating

    • Grating Equation: d×sin(θ)=m×λd \times \sin(\theta) = m \times \lambda, where dd is the grating spacing (d=1/Nlinesd = 1/N_{lines} per unit length).
    • Dispersive Power: dθdλ=md×cos(θ)\frac{d\theta}{d\lambda} = \frac{m}{d \times \cos(\theta)} in units of rad/mrad/m. To convert to deg/…deg/\text{…}, multiply by (180π)×1010(\frac{180}{\pi}) \times 10^{-10}.
    • Resolving Power (RPRP): RP=λΔλ=N×mRP = \frac{\lambda}{\Delta \lambda} = N \times m, where NN is the total number of lines and mm is the order.
    • Smallest Resolvable Change in Wavelength ((\Delta \lambda)): Δλ=λRP\Delta \lambda = \frac{\lambda}{RP}.
    • Highest Visible Order (mmaxm_{max}): mmax=dλm_{max} = \lfloor \frac{d}{\lambda} \rfloor, determined at θ=90\theta = 90^\circ where sin(θ)=1\sin(\theta) = 1.
    • Overlapping Orders: Condition for spectral overlap is m1×λ1=m2×λ2m_1 \times \lambda_1 = m_2 \times \lambda_2.
  • Resolving Power of Optical Instruments

    • Rayleigh Criterion: Minimum angular resolution is θmin=1.22λD\theta_{min} = \frac{1.22\lambda}{D}, where DD is the objective lens diameter.
    • Resolving Power (RPRP): RP=D1.22λRP = \frac{D}{1.22\lambda}.
    • Minimum Resolvable Distance (dmind_{min}): dmin=θmin×Ld_{min} = \theta_{min} \times L, where LL is the distance to the object.

Module 1: Interference

  • Thin Film Interference

    • Optical Path Difference ((\Delta)): Δ=2μt×cos(θr)\Delta = 2\mu t \times \cos(\theta_r), where μ\mu is refractive index, tt is thickness, and θr\theta_r is the refraction angle.
    • Phase Change on Reflection: A phase change of +π+\pi (half-wave loss) occurs when reflecting off a denser medium; no phase change occurs when reflecting off a rarer medium.
    • Conditions with One Phase Change (e.g., soap film in air):
      • Bright Fringe: 2μt×cos(θr)=(m12)λ2\mu t \times \cos(\theta_r) = (m - \frac{1}{2})\lambda, where m=1,2,m = 1, 2, \dots
      • Dark Fringe: 2μt×cos(θr)=mλ2\mu t \times \cos(\theta_r) = m\lambda, where m=0,1,2,m = 0, 1, 2, \dots
    • Conditions with No Net Phase Change:
      • Bright Fringe: 2μt×cos(θr)=mλ2\mu t \times \cos(\theta_r) = m\lambda.
      • Dark Fringe: 2μt×cos(θr)=(m12)λ2\mu t \times \cos(\theta_r) = (m - \frac{1}{2})\lambda.
    • Anti-reflection Coating (Minimum Thickness): tmin=λ4μft_{min} = \frac{\lambda}{4\mu_f} (assuming one phase change to minimise reflection).
  • Newton's Rings

    • n-th Dark Ring Diameter (Air film, reflected light): Dn2=4nRλD_n^2 = 4nR\lambda, where RR is the radius of curvature of the lens.
    • n-th Bright Ring Diameter: Dn2=(4n+2)RλD_n^2 = (4n + 2)R\lambda.
    • With Liquid (Index μ\mu): Dn2=4nRλμD_n^2 = \frac{4nR\lambda}{\mu}.
    • Wavelength ((\lambda)) from Diameters: λ=Dm2Dn24(mn)R\lambda = \frac{D_m^2 - D_n^2}{4(m - n)R}.
    • Refractive Index of Liquid ((\mu)): μ=(Dm2Dn2)air(Dm2Dn2)liq\mu = \frac{(D_m^2 - D_n^2)_{air}}{(D_m^2 - D_n^2)_{liq}}.
    • Radius of Curvature (RR): R=Dn24nλR = \frac{D_n^2}{4n\lambda}, using the dark ring diameter.
    • Thickness at n-th Dark Ring (tt): t=nλ2t = \frac{n\lambda}{2} (derived from 2t=nλ2t = n\lambda for conditions with one phase change).
  • Young's Double-Slit Experiment (Detailed)

    • Path Difference ((\Delta)): Δ=d×yD=d×sin(θ)\Delta = \frac{d \times y}{D} = d \times \sin(\theta), where dd is slit separation, yy is distance from the centre, and DD is screen distance.
    • Phase Difference ((\delta)): δ=(2πλ)×Δ\delta = (\frac{2\pi}{\lambda}) \times \Delta.
    • Fringe Width ((\beta)): β=λDd\beta = \frac{\lambda D}{d}.
    • m-th Bright Fringe Position (ymy_m): ym=mλDdy_m = \frac{m \lambda D}{d}, for m=0,±1,±2,m = 0, \pm 1, \pm 2, \dots
    • m-th Dark Fringe Position (ymy_m): ym=(2m1)λD2dy_m = \frac{(2m - 1) \lambda D}{2d}.
    • Coincidence of Two Wavelengths: Condition n1β1=n2β2n_1 \beta_1 = n_2 \beta_2. Solve for the smallest integers using the LCM of β1\beta_1 and β2\beta_2.
  • Intensity in Interference

    • Resultant Intensity (II): I=I1+I2+2I1I2×cos(δ)I = I_1 + I_2 + 2\sqrt{I_1 I_2} \times \cos(\delta).
    • Maximum Intensity (ImaxI_{max}): Imax=(I1+I2)2I_{max} = (\sqrt{I_1} + \sqrt{I_2})^2, occurring at δ=0,2π,\delta = 0, 2\pi, \dots
    • Minimum Intensity (IminI_{min}): Imin=(I1I2)2I_{min} = (\sqrt{I_1} - \sqrt{I_2})^2, occurring at δ=π,3π,\delta = \pi, 3\pi, \dots
    • Source Ratio from Imax/IminI_{max}/I_{min}: I1I2=r+1r1\sqrt{\frac{I_1}{I_2}} = \frac{\sqrt{r} + 1}{\sqrt{r} - 1}, where r=ImaxIminr = \frac{I_{max}}{I_{min}}.
    • Amplitude Ratio (Amax/AminA_{max}/A_{min}): AmaxAmin=A1+A2A1A2\frac{A_{max}}{A_{min}} = \frac{A_1 + A_2}{|A_1 - A_2|}, noting that amplitude AIA \propto \sqrt{I}.
  • Michelson Interferometer

    • Wavelength ((\lambda)) from Fringe Count: λ=2×ΔdN\lambda = \frac{2 \times \Delta d}{N}, where Δd\Delta d is the mirror displacement and NN is the number of fringes counted.

Physical Constants

  • Fundamental Constants

    • Planck's constant (hh): 6.626×1034Js6.626 \times 10^{-34}\,J \cdot s
    • Reduced Planck's constant (h2π\frac{h}{2\pi}): 1.055×1034Js1.055 \times 10^{-34}\,J \cdot s
    • Speed of light (cc): 3×108m/s3 \times 10^8\,m/s
    • Electron charge (ee): 1.6×1019C1.6 \times 10^{-19}\,C
    • Electron rest mass (mem_e): 9.11×1031kg9.11 \times 10^{-31}\,kg
    • Proton mass (mpm_p): 1.67×1027kg1.67 \times 10^{-27}\,kg
    • Neutron mass (mnm_n): 1.674×1027kg1.674 \times 10^{-27}\,kg
    • Permeability of free space (μ0\mu_0): 4π×107H/m4\pi \times 10^{-7}\,H/m
    • Boltzmann constant (kBk_B): 8.617×105eV/K=1.381×1023J/K8.617 \times 10^{-5}\,eV/K = 1.381 \times 10^{-23}\,J/K
    • Avogadro number (NAN_A): 6.022×1023/mol6.022 \times 10^{23}/mol
    • Bohr magneton (μB\mu_B): 9.274×1024Am29.274 \times 10^{-24}\,A \cdot m^2
  • Derived values and Conversions

    • Thermal energy kTkT at 300K300\,K: 0.02585eV0.026eV0.02585\,eV \approx 0.026\,eV
    • hchc product: 1240eVnm=1.988×1025Jm1240\,eV \cdot nm = 1.988 \times 10^{-25}\,J \cdot m
    • Energy conversion: 1eV=1.6×1019J1\,eV = 1.6 \times 10^{-19}\,J
    • Length conversion (Angstrom): 1…=1010m1\,\text{…} = 10^{-10}\,m
    • Length conversion (Nanometer): 1nm=109m1\,nm = 10^{-9}\,m
  • Note: All formulas used in this sheet assume SI units unless specified otherwise. h2π\frac{h}{2\pi} is the reduced Planck constant (h-bar).