Special Purpose Diodes and Their Applications Study Notes
Fundamentals of P-N Junction Diodes
Definition and Structure: A P-N junction is formed by mixing p-type and n-type semiconductor materials. It is also known as a diode because it has two distinct terminals: the anode (positive lead) and the cathode (negative lead).
Terminals:
- Anode: The P-type region of the diode. In forward bias, it is connected to the positive terminal of the battery and charges the junction with holes.
- Cathode: The N-type region of the diode, connected to the negative terminal in forward bias.
Physical Dimensions: The thickness of a P-N junction (specifically the depletion region) is on the order of 10−6m.
The Depletion Region:
- This region contains fixed donor and acceptor ions but no mobile charge carriers (electrons or holes).
- It behaves as an insulator because the electric field sweeps out thermally generated electron-hole pairs, reducing charge carrier concentration to negligible levels.
Potential Barrier:
- The electric field between donor and acceptor ions (with no external voltage) is called a barrier.
- It is created by the diffusion of electrons and holes across the junction.
- Material-Specific Barrier Potentials:
- Germanium (Ge): 0.3V (or 0.3eV).
- Silicon (Si): 0.7V(0.7eV).
Biasing Conditions:
- Forward Bias: Positive terminal to P-side, negative terminal to N-side. This offers low resistance (ideally zero) and allows current to flow rapidly once the barrier voltage is exceeded.
- Reverse Bias: Positive terminal to N-side, negative terminal to P-side. This causes holes and electrons to move away from the junction, widening the depletion region and offering very high resistance (acting as an insulator).
Current in Diodes:
- Forward Current: Conducts in one direction only. Conventional current flows from P-side to N-side (opposite to electron flow).
- Reverse Current: Primarily caused by the drift of charges (minority carriers). This current is extremely low, typically in the microampere (μA), nanoampere (nA), or picoampere (pA) range.
- Saturation Current (Is or Io): This current during reverse bias depends on temperature, doping level, and the physical size of the junction.
Zener Diodes and Breakdown Phenomena
Operational Principle: A Zener diode is specifically designed to operate in the breakdown region in reverse bias without sustaining damage.
Zener Breakdown Mechanism: The sudden increase in current is due to the rupture of many covalent bonds. This typically occurs at voltages below 6V.
Avalanche Breakdown: In normal P-N junction diodes, breakdown occurs via avalanche breakdown, which is distinct from Zener breakdown and typically happens at voltages above 6V.
Doping Level: Zener diodes are heavily doped to ensure the breakdown occurs at a lower specific voltage.
Voltage Regulation:
- Zener diodes are used as shunt voltage regulators because they maintain a constant voltage across their terminals once in breakdown.
- They are used to provide a reference voltage in DC power supplies.
Zener Diode Characteristics:
- It possesses incremental or dynamic resistance, which is the inverse of the slope of its I−V characteristics.
- Temperature Coefficient (TC):
- For Zener voltage less than 5V, TC is negative.
- Around 5V, TC can be made zero.
- For higher Zener voltages, TC is positive.
- To achieve a zero temperature coefficient, a Zener diode with a negative TC (about −2mV) can be connected in series with a forward-biased diode (TC about +2mV).
Standard Zener Voltages: Typical values include 5.1V, 5.6V, 6.2V, and 9.1V. Note that 5.8V is not a standard value.
Series Connection: If two 15V Zener diodes are connected in series, the total regulated output voltage is 30V.
Light Emitting Diodes (LEDs)
Operational Principle: LEDs operate under forward bias. When electrons recombine with holes at the junction, energy is released in the form of photons, a process known as electroluminescence.
Material Requirements:
- LEDs are heavily doped.
- Semiconductors must have a bandgap of at least 1.8eV to produce visible light.
- Gallium Arsenide (GaAs): Has a bandgap of 1.4eV and is used to produce infrared LEDs.
- Aluminium Alloys: Used to produce Red, Orange, and Yellow light.
Characteristics:
- Fast action (low/no warm-up time).
- Long life and low operational voltage.
- The reverse breakdown voltage of LEDs is very low, typically around 5V; exceeding this can fuse the device.
- Intensity vs. Current: Increasing forward current increases light intensity only up to a certain maximum value; beyond that, intensity decreases.
- I-V Relationship: In LED characteristics, as frequency increases, the voltage required for the same current increases. Higher wavelengths (lower frequency) require less voltage.
Rectification and Power Supplies
Rectification: The process of converting alternating current (AC) into direct current (DC). Rectifiers allow current to pass in only one direction.
Components of a Power Supply:
- Transformer: Used to change the voltage level.
- Rectifier: Converts AC to pulsating DC (containing both DC and AC harmonics/ripples).
- Filter: Used to remove ripples (AC components) from the rectified output to prevent objective losses and improve efficiency.
- Voltage Regulator: Stabilizes the DC output voltage against variations in load or input.
Regulation Types:
- Load Regulation: The fractional change of output voltage when load current increases from zero to its maximum value.
- Line Regulation: Process of maintaining constant output voltage despite changes in input voltage.
Efficiency Facts: Commercial power supplies typically have voltage regulation within 1%. In unregulated supplies, output voltage decreases as load current increases.
Modern Standard: Conventional Zener diode regulators are largely being replaced by Integrated Circuits (ICs).
Filter Circuits
Purpose: To eliminate the AC component (ripples) from the output of a rectifier.
Types of Filters:
- Shunt Capacitor Filter: Connected in parallel with the load. It stores electrical energy when the diode is conducting and delivers it when the diode is non-conducting.
- Cut-in point: The instant conduction starts.
- Cut-out point: The instant conduction stops.
- Charge lost formula:q=IDC×T (where T is the non-conducting time).
- RMS Ripple Voltage:Vrms=23IDC.
- Inductor (L) Filter: Connected in series with the load. It offers high impedance to AC components and low resistance/impedance to DC, thereby dampening the AC signal.
- LC Filter: The ripple factor remains constant regardless of the load current.
- CLC (Pi) Filter: Consists of one inductor and two capacitors arranged like the letter 'π'.
- Offers very low ripple factor and smooth output.
- The first capacitor does the majority of filtering because it offers very low reactance to the ripple frequency.
- The inductor yields high reactance to AC and zero resistance to DC.
- The output waveform of a CLC filter is superimposed with a sawtooth wave.
Semiconductor Physics
Intrinsic Semiconductors: Pure semiconductor crystals (undoped or i-type) where current flows due to the breakage of crystal bonds. The number of electrons in the conduction band equals the number of holes in the valence band.
Extrinsic Semiconductors: Doped semiconductors.
- P-type: Created by adding trivalent impurities (acceptors) like Gallium (Ga), Boron (B), or Aluminum (Al) to Germanium or Silicon. The majority charge carriers are holes (electron vacancies).
- N-type: Created using donor impurities.
Identification: Diode leads are identified via color coding or a color band.
Uninterruptible Power Supply (UPS)
Purpose: Used for critical loads (like computers) where temporary power failure causes significant inconvenience.
Static UPS: Requires both an inverter (to convert battery DC to AC for the load) and a rectifier (to charge the battery from the mains).
Rotating UPS: Uses an alternator driven by a diesel engine to supply power when the mains fail.
Batteries:
- Lead Acid: Commonly used because they are cheaper.
- Nickel-Cadmium (NC): Better performance but 3 to 4 times more expensive than Lead Acid.
- Lithium-Ion (Li-On): Also used in UPS systems.