EGA211 Semiconductor Technology - Lecture 1 Notes

Course Information

  • Lecturer: Professor Karol Kalna
    • Room: B202 Engineering East
    • Email: k.kalna@swansea.ac.uk
  • Lectures/Exercise classes:
    • 2 lectures per week:
      • Wednesday 10am-11am
      • Friday 10am-11am
  • Lab Work:
    • Tuesday 3 sessions × 10am-11am
    • Tuesday 3 sessions × 10am-12pm
    • Location: EEE B107 (The EEE Lab)
  • Office hour:
    • Friday 11am-12pm
    • Location: Engineering East, room B202
  • Assessment:
    • Project Report: 40%
    • Exam Paper: 60%
  • Notes:
    • Canvas: slides, lecture capture, exercise classes
  • Feedback:
    • Written comments on the assessment project
    • Office hours
  • Resources:
    • Recommended books, web information, YouTube, comprehensive notes
    • EGA211 Semiconductor Technology

Handbook Notes

  • Exam Mark Requirement:
    • Must achieve at least 40% mark from the assessment project report for the exam mark to count.
    • If less than 40% is achieved on the assessment project report, the entire module will fail with a mark of zero.
  • Assessment Project Report Mark Requirement:
    • Must achieve at least 40% in the exam component for the mark from the assessment project report to count.
    • If less than 40% is achieved on the exam, the module mark will be just the exam mark.
  • Laboratory Classes:
    • 6 laboratory classes of 2 hours are compulsory.
    • Students must attend at least 5 of all classes.
    • Missing laboratory classes can be excused only with a valid Extenuating Circumstances request.
    • Failing to attend one of the 5 compulsory classes will result in zero mark for the 40% project assessment.
    • Zero mark from assessment will mean zero mark on the module, which means that the student failed the module.

Course Outline

  1. Introduction to semiconductors
    • Silicon
    • Silicon technology
      • Crystal structure
      • Crystal defects
      • Silicon refinement & purification
      • Processing
      • Czochralski growth
      • “Float Zone” process
      • Wafer diameters
      • Doping
        • Diffusion
        • Ion implantation
        • Epitaxial growth
      • Oxidation
      • Deposition
        • Molecular Beam Epitaxy (MBE)
        • Chemical Vapour Deposition (CVD)
        • Physical Vapour Deposition (PVD)
        • Electroplating
      • Lattice matching & strained silicon
      • Wafer bonding & Silicon On Insulator (SOI) technology
      • Etching
      • Lithography
        • Photolithography
        • Photo resists & resist chemistry
        • Electron Beam Lithography (EBL)
        • Extreme Ultraviolet Lithography (EUL)
        • Nanoimprint Lithography (NIL)
      • SILVACO LABORATORY (compulsory)

Lecture 1 - Silicon Technology

  • Synopsis:
    • Silicon
    • Bandgap
    • Doping

Semiconductors

  • Definition: A semiconductor is a solid whose electrical conductivity can be controlled over a wide range, either permanently or dynamically.
  • Importance: Semiconductors are vital technologically and economically in our society.
  • Silicon: The most commercially important semiconductor.
  • Semiconductor devices: Electronic components made of semiconductor materials, essential in modern electrical & electronic devices.
    • Applications range from energy distribution and communication networks to smart domestic appliances, cars, computers, digital audio/video players, and mobile devices.

Silicon

  • Atomic Number: 14
  • Melting Point: 1,410C1,410^{\circ}C
  • Density: 2.33gcm3=2330kgm32.33 g \cdot cm^{-3} = 2330 kg \cdot m^{-3}
  • Tetravalent metalloid: Silicon is less reactive than its chemical analog carbon.
  • Abundance: Silicon is the second most abundant element (after oxygen) in the Earth's crust, making up 25.7% of the crust by mass.
  • Industrial Uses: Many (find out using mobile devices).
  • Principal component of most semiconductor devices.
  • Widely used due to:
    • Remaining a semiconductor at higher temperatures.
    • Ability to be p-type and n-type doped.
    • Native oxide is easily grown in a furnace.
    • Forms a better semiconductor/dielectric interface than almost all other material combinations.
  • Periodic Table (Dmitri Mendeleev, 1869):
    • "In a dream,” he quoted, “I saw a table where all the elements fell into place as required. Awakening, I immediately wrote it down on a piece of paper. ”

Silicon Properties

  • Elemental Crystalline Form:
    • Grey colour and a metallic lustre which increases with the size of the crystal.
    • Rather strong, very brittle, and prone to chipping (similar to glass).
  • Reactivity:
    • Relatively inert element.
    • Reacts with halogens and dilute alkalis.
    • Most acids (except for a combination of nitric acid and hydrofluoric acid) do not affect it.
  • Temperature Coefficient of Resistance:
    • Pure silicon has a negative temperature coefficient of resistance.
    • The number of free charge carriers increases with temperature.
  • Piezoresistive Effect:
    • The electrical resistance of single crystal silicon changes significantly under the application of mechanical stress.

Bandgap

  • Semiconductors are very similar to insulators.
  • Difference between semiconductors and insulators:
    • Insulators have larger band gap energies.
    • Electrons must acquire a larger kinetic energy to be free to flow in insulators.
  • Semiconductors @ Room Temperature:
    • Very few electrons gain enough thermal energy to leap the band gap, which is necessary for conduction.
  • Electrical Properties:
    • Pure semiconductors and insulators, in the absence of applied fields, have roughly similar electrical properties.
  • Semiconductors bandgaps:
    • Allow for many other means, besides temperature, to control their electrical properties.

The Doping of Semiconductors

  • Doping Definition: The addition of a small percentage of foreign atoms in the regular crystal lattice of silicon or germanium produces dramatic changes in their electrical properties, producing n-type and p-type semiconductors.
  • Pentavalent Impurities:
    • Impurity atoms with 5 valence electrons produce n-type semiconductors by contributing extra electrons.
    • Phosphorous may be added by diffusion of phosphine gas (PH3PH_3).
  • Trivalent Impurities:
    • Impurity atoms with 3 valence electrons produce p-type semiconductors by producing a hole or electron deficiency.
    • It is typical to use B<em>2H</em>6B<em>2H</em>6 diborane gas to diffuse boron into the silicon material.

Intrinsic Semiconductor

  • Definition: A silicon crystal is different from an insulator because at any temperature above absolute zero temperature, there is a finite probability that an electron in the lattice will be knocked loose from its position, leaving an electron deficiency (a “hole“).
  • Voltage Application: If a voltage is applied, then both the electron and the hole can contribute to a small current flow.
  • Band Theory of Solids: Explains the conductivity of a semiconductor.
  • Band Model: States that at room temperatures there is a statistical probability that electrons can reach the conduction band and contribute to electrical conduction.
  • Intrinsic vs. Doped Silicon: The term intrinsic here distinguishes between the properties of pure "intrinsic" silicon and the dramatically different properties of doped n-type or p-type semiconductors.

Doped Semiconductors

  • N-type Semiconductor:
    • The dopant contributes extra electrons, dramatically increasing the conductivity.
  • P-type Semiconductor:
    • The dopant produces extra vacancies or holes, which likewise increase the conductivity.
  • Electrons in Conduction Band:
    • Electrons excited to the conduction band also leave behind unoccupied states in the valence band which can move along to carry positive charge - holes.
  • Both the conduction band electrons and the valence band holes contribute to electrical conductivity.
  • Hole Movement:
    • The holes themselves do not actually move, but a neighbouring electron can move to fill the hole, leaving a hole at the place it has just come from.
    • In this way the holes appear to move and behave as if they were actual positively charged particles.